相关论文: Hall coefficient and magnetoresistance of 2D spin-…
Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and…
The thickness dependence of spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers is studied using the first-principles non-equilibrium Green's function formalism combined with the Anderson disorder model. A systematic…
Hall effect and magnetoresistance have been measured on single crystals of $NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $ $K). For the undoped samples, strong Hall effect and magnetoresistance with strong…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…
We study the dissipative and Hall viscosity of a disordered noninteracting 2D electrons, both analytically and numerically. Analytically, we employ the self-consistent Born approximation, explicitly taking into account the modification of…
We present a method for parametric modelling of the physical components of the Galaxy's magnetised interstellar medium, simulating the observables, and mapping out the likelihood space using a Markov Chain Monte-Carlo analysis. We then…
General thermodynamical arguments are used to relate the Hall current to the part of the magnetic moment originated in "macroscopic current loops". The Hall resistance is found to depend only on the electron properties in the vicinity of…
We report the observation of an acute sensitivity of the anisotropic longitudinal resistivity of two-dimensional electron systems in half-filled high Landau levels to the magnitude and orientation of an in-plane magnetic field. In the third…
We show that the joint effect of spin-orbit and magnetic fields leads to a spin polarization perpendicular to the plane of a two-dimensional electron system with Rashba spin-orbit coupling and in-plane parallel dc magnetic and electric…
We investigate magnetoresistance phenomena associated with the magnetization hard-axis collapse in polycrystalline Co thin films. Transport measurements reveal that, for specific orientations of the applied magnetic field, the system…
Motivated by recent experiments on the observation of room temperature skyrmions in a layered heterostructure and subsequent demonstration of topological Hall effect in the same system, we have studied a minimal model of itinerant electrons…
The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the…
The magnetic field of complete spin polarization is calculated in a disorderless single-valley strongly-interacting 2D electron system. In the metallic region above the Wigner-Mott transition, non-equilibrium spin states are predicted,…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…
The results of computer simulation of particle motion over the plane with randomly distributed scatters are presented. They are used to analyse the influence of scattering anisotropy on the negative magnetoresistance due to weak…
We propose an approach based on a generalized quantum mechanics to deal with the basic features of the intrinsic spin Hall effect. This can be done by considering two decoupled harmonic oscillators on the noncommutative plane and evaluating…
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized…
Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. The results cannot be understood within the framework of standard theories for quantum corrections of a weakly…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
Physical properties such as the conductivity are usually classified according to the symmetry of the underlying system using Neumann's principle, which gives an upper bound for the number of independent components of the corresponding…