相关论文: Hall coefficient and magnetoresistance of 2D spin-…
We show that the magneto-electric coupling in 3D (strong) topological insulators is related to a second derivative of the bulk magnetization. The formula we derive is the non-linear response analog of the Streda formula for Hall…
We propose an approach based on the generalized quantum mechanics to deal with the basic features of the spin Hall effect. We begin by considering two decoupled harmonic oscillators on the noncommutative plane and determine the solutions of…
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-d have been carried out to investigate the relationship between the magnetic structure and the anomalous Hall resistivity rH. The hysteretic behavior of the…
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility \mu=1.9 x 10^5 cm^2/Vs at density n=1.45 x…
Magnetic barriers in two-dimensional electron gases are shifted in B space by homogeneous, perpendicular magnetic fields. The magnetoresistance across the barrier shows a characteristic asymmetric dip in the regime where the polarity of the…
In ultra-high quality two-dimensional (2D) materials the mean free paths of phonons and electrons relative to all mechanisms of scattering can be much greater than a size of a sample. In this case the most intensive type of scattering of…
Electric Hall effects generated by an in-plane magnetic field have recently gained attention owing to their intrinsic origin in topological electronic states and potential application in magnetic field sensing. In pratice, the measured…
We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (3D TIs) that is capped by a ferromagnetic insulator (FI). We calculate charge…
We obtain analytic formulas for the frequency-dependent spin-Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of impurities, linear spin-orbit Rashba interaction, and external magnetic field perpendicular to the…
In this work, we study electrical conductivity and Hall conductivity in the presence of electromagnetic field using Relativistic Boltzmann Transport Equation with Relaxation Time Approximation. We evaluate these transport coefficients for a…
In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic…
In this work we present a theoretical approach to study the effect of an in-plane (parallel) magnetic field on the microwave-assisted transport properties of a two-dimensional electron system. Previous experimental evidences show that…
We report measurements of the in-plane and interlayer magnetoresistances of FeSe. The in-plane magnetoresistance $\Delta \rho_{ab}/\rho_{ab}(0)$ for $B \parallel c$ is positive below $T_s$ and increases with decreasing temperature,…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $\nu =…