相关论文: Conductance quantization in etched Si/SiGe quantum…
We present a theoretical analysis of recent experimental results of Yacoby et al. on transport properties of high quality quantum wires. We suggest an explanation of observed deviations of the conductance from the universal value $2e^2/h$…
We present numerical studies of conduction in graphene nanoribbons with different types of disorder. We find that even when defect scattering depresses the conductance to values two orders of magnitude lower than 2e^2/h, equally spaced…
The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$.…
Recently, different experiments on the transport through atomic-sized contacts made of ferromagnetic materials have produced contradictory results. In particular, several groups have reported the observation of half-integer conductance…
We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from…
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$.…
We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few…
When a quantum wire is weakly confined, a conductance plateau appears at e^2/h with decreasing carrier density in zero magnetic field accompanied by a gradual suppression of the 2e^2/h plateau. Applying an in-plane magnetic field B|| does…
The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with…
Electronic transport properties of bismuth nanocontacts are analyzed by means of a low temperature scanning tunneling microscope. The subquantum steps observed in the conductance versus elongation curves give evidence of atomic…
We demonstrate a scanning gate grid measurement technique consisting in measuring the conductance of a quantum point contact (QPC) as a function of gate voltage at each tip position. Unlike conventional scanning gate experiments, it allows…
The conductance through a quantum point contact created by a sharp and hard metal tip on the graphite surface has features which to our knowledge have not been encountered so far in metal contacts or in nanowires. In this paper we first…
We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…
Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching of high--electron mobility films grown by MBE on BaF_2. In…
Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures…
We calculate the non-linear conductance of a quantum point contact using the non-equilibrium Greens function technique within the Hartree approximation of spinless electrons. We quantitative reproduce the 0.25-anomaly in the differential…
We study the low-temperature transport properties of 1D quantum wires as the confinement strength V_conf and the carrier density n_1D are varied using a combination of split gates and a top gate in GaAs/AlGaAs heterostructures. At…
We demonstrate that conductance anomalies can arise in a clean, adiabatic quantum point contact when a channel is partially transmitting. Even for a smooth barrier potential, backscattering induces Friedel oscillations that, via electron…
We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an…
The semiconductor quantum point contact has long been a focal point for studies of one-dimensional electron transport. Their electrical properties are typically studied using ac conductance methods, but recent work has shown that the dc…