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相关论文: Can correlations drive a band insulator metallic?

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We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

强关联电子 · 物理学 2009-10-16 Michael Sentef , Jan Kunes , Philipp Werner , Arno P. Kampf

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a…

强关联电子 · 物理学 2015-06-16 Arti Garg , H. R. Krishnamurthy , Mohit Randeria

The Mott-Hubbard metal-insulator transition is studied within a simplified version of the Dynamical Mean-Field Theory (DMFT) in which the coupling between the impurity level and the conduction band is approximated by a single pole at the…

强关联电子 · 物理学 2009-10-31 R. Bulla , M. Potthoff

The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…

强关联电子 · 物理学 2013-04-09 Axel Euverte , Simone Chiesa , Richard . T. Scalettar , George G. Batrouni

Tight binding electrons on a honeycomb lattice are described by an effective Dirac theory at low energies. Lowering symmetry by an alternate ionic potential ($\Delta$) generates a single-particle gap in the spectrum. We employ the dynamical…

强关联电子 · 物理学 2012-05-30 M. Ebrahimkhas , S. A. Jafari

We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

We analyze an interplay between Coulomb blockade and quantum fluctuations in a coherent conductor (with dimensionless conductance $g \gtrsim 1$) attached to an Ohmic shunt. We demonstrate that at T=0 the system can be either an insulator or…

介观与纳米尺度物理 · 物理学 2009-11-07 Dmitri S. Golubev , Andrei D. Zaikin

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

We employ the dynamical mean field approximation to study the effects of ionic potential ($\Delta$) on the square lattice Hubbard model. At half-filling when the staggered potential ($\Delta$) dominates the on-site Hubbard interaction…

强关联电子 · 物理学 2019-03-27 A. Shahbazy , M. Ebrahimkhas

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

The dynamical mean-field theory (DMFT) is employed to study the Mott transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and…

强关联电子 · 物理学 2016-08-31 M. Potthoff , W. Nolting

We report a systematic study of the transition from a band insulator (BI) to a Mott insulator (MI) in a one-dimensional Hubbard model at half-filling with an on-site Coulomb interaction U and an alternating periodic site potential V. We…

强关联电子 · 物理学 2009-10-31 Jizhong Lou , Shaojin Qin , Tao Xiang , Changfeng Chen , Guang-Shan Tian , Zhaobin Su

We study metal-insulator transitions between Mott insulators and metals. The transition mechanism completely different from the original dynamical mean field theory (DMFT) emerges from a cluster extension of it. A consistent picture…

强关联电子 · 物理学 2007-07-18 Y. Z. Zhang , Masatoshi Imada

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…

强关联电子 · 物理学 2007-05-23 A. Liebsch

Mott insulators can be portrayed as "unsuccessful metals": systems in which a strong Coulomb repulsion prevents charge conduction notwithstanding the metal-like density of conduction electrons. The possibility to unlock such large density…

强关联电子 · 物理学 2016-10-24 G. Mazza , A. Amaricci , M. Capone , M. Fabrizio

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster Dynamical Mean Field Theory (DMFT). We compare cluster DMFT results with those of single site DMFT. We show that inclusion of the short range…

强关联电子 · 物理学 2009-11-13 H. Park , K. Haule , G. Kotliar

We address the role of electronic correlations in different kinds of band insulators by using the two-orbital Hubbard model within the dynamical mean-field theory (DMFT). An intriguing finding is that electronic correlations turn a metal…

强关联电子 · 物理学 2025-09-11 Nagamalleswararao Dasari , Sujan K. K. , Juana Moreno , N. S. Vidhyadhiraja

We apply the dynamical mean field theory (DMFT) in the iterative perturbation theory(IPT) to doubly degenerate eg bands and triply degenerate tg bands on a simple cubic lattice and calculate the spectrum and optical conductivity in…

强关联电子 · 物理学 2008-09-25 Oki Miura , Takeo Fujiwara
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