中文
相关论文

相关论文: Electron spectra close to a metal-to-insulator tra…

200 篇论文

The single-particle dynamics close to a metal-to-insulator transition induced by strong repulsive interaction between the electrons is investigated. The system is described by a half-filled Hubbard model which is treated by dynamic…

强关联电子 · 物理学 2015-03-13 Michał Karski , Carsten Raas , Götz S. Uhrig

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

The electron correlations in narrow energy bands are examined in framework of the Hubbard model. The single-particle Green function and energy spectrum are obtained in paramagnetic state at half-filling by means of new two-pole…

强关联电子 · 物理学 2011-12-30 Leonid Didukh , Yuriy Skorenkyy

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical…

强关联电子 · 物理学 2009-11-10 Gun Sang Jeon , Tae-Ho Park , Jung Hoon Han , Hyun C. Lee , Han-Yong Choi

A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…

强关联电子 · 物理学 2007-05-23 Leonid Didukh

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…

强关联电子 · 物理学 2007-05-23 A. A. Shashkin , S. V. Kravchenko , T. M. Klapwijk

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…

强关联电子 · 物理学 2016-11-18 A. A. Shashkin , S. V. Kravchenko

In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…

强关联电子 · 物理学 2015-06-25 Leonid Didukh , Vasyl Hankevych

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

The model of a strongly correlated system in which periodically spaced Anderson-Hubbard centers are introduced into narrow-band metal is considered. Besides the interactions between localized magnetic moments and strong on-site Coulomb…

强关联电子 · 物理学 2023-07-19 Yuriy Skorenkyy , Leonid Didukh , Oleksandr Kramar , Yuriy Dovhopyaty

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…

凝聚态物理 · 物理学 2015-06-25 Marcelo J. Rozenberg , Goetz Moeller , Gabriel Kotliar

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

A model for description of materials with narrow energy bands is proposed. It is shown that in narrow-band materials electron-hole symmetry is absent in contrast to the Hubbard model. In this paper metal-insulator transition is studied. The…

强关联电子 · 物理学 2007-05-23 Leonid Didukh

The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-particle Green's functions within many-electron representation. A simple analytical generalization of the single-site Hubbard-III…

强关联电子 · 物理学 2009-11-07 V. Yu. Irkhin , A. V. Zarubin

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng
‹ 上一页 1 2 3 10 下一页 ›