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We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…

介观与纳米尺度物理 · 物理学 2015-06-12 Wenzhong Bao , Xinghan Cai , Dohun Kim , Karthik Sridhara , Michael S. Fuhrer

High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical…

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…

In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the…

We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into…

介观与纳米尺度物理 · 物理学 2013-01-01 Qiuzi Li , E. Rossi , S. Das Sarma

We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the…

介观与纳米尺度物理 · 物理学 2022-08-24 Sanjay Gopalan , Maarten L. Van de Put , Gautam Gaddemane , Massimo V. Fischetti

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…

材料科学 · 物理学 2015-06-25 I. N. Hulea , S. Fratini , H. Xie , C. L. Mulder , N. N. Iossad , G. Rastelli , S. Ciuchi , A. F. Morpurgo

With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductors and dielectrics has received considerable attention due to…

计算物理 · 物理学 2017-01-02 Sheng Yu , Shunjie Ran , Hao Zhu , Kwesi Eshun , Chen Shi , Kai Jiang , Qiliang Li

Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted extensive research attention due to their promising compatibility with silicon based electronics. However, several key challenges still limit…

应用物理 · 物理学 2026-03-03 Samiksha Bhatia , Ramesh Singh Bisht , Pramod Kumar

The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution…

应用物理 · 物理学 2017-11-13 Hong Zhou , Kerry Maize , Jinhyun Noh , Ali Shakouri , Peide D. Ye

We theoretically consider temperature and density-dependent electron-phonon interaction induced many-body effects in the two-dimensional (2D) metallic carriers confined on the surface of the 3D topological insulator (e.g. Bi$_2$Se$_3$). We…

介观与纳米尺度物理 · 物理学 2013-08-21 S. Das Sarma , Qiuzi Li

Interfacial thermal transport is a critical bottleneck in nanoscale systems, where heat dissipation and energy efficiency are strongly modulated by molecular ordering at solid-liquid boundaries. Here, using atomistic simulations of…

介观与纳米尺度物理 · 物理学 2026-01-14 Viktor Mandrolko , Mykola Isaiev

We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the…

We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…

介观与纳米尺度物理 · 物理学 2016-12-21 Chenglei Guo , Zhen Tian , Yanjun Xiao , Qixi Mi , Jiamin Xue

We theoretically study the thermoelectric transport S in a double-layer bilayer graphene (BLG-GaAs-BLG) system on dielectric substrates (h-BN, Al2O3, HfO2). Electrons interact with GaAs acoustic phonons via both the deformation potential…

介观与纳米尺度物理 · 物理学 2025-08-06 Vo Van Tai , Truong Van Tuan , Tran Trong Tai , Le Tri Dat , Nguyen Duy Vy

Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…

The relatively low thermal conductivity of biodegradable polylactic acid (PLA) has limited its applications in various fields. To address this issue, the incorporation of nanofillers, such as boron nitride nanosheets (BNNSs), has emerged as…

材料科学 · 物理学 2024-02-08 Ghazal Jamirad , Abbas Montazeri , Ali Rajabpour

The transport properties of high-performance thin-film transistors (TFT) made with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The room-temperature field-effect mobility of the devices varied between 0.004 cm2/V s…

材料科学 · 物理学 2009-11-10 A. Salleo , T. W. Chen , A. R. Voelkel , Y. Wu , P. Liu , B. S. Ong , R. A. Street

We investigate the mechanical properties of bilayers of 1,2-dipalmitoyl-sn-glycero-3-phosphocholine in the gel phase by using peak force tapping with quantitative nanomechanical mapping. We study both dry and aqueous bilayers and liposomes…

软凝聚态物质 · 物理学 2021-02-04 Luca Quaroni , Kingshuk Bandopadhyay , Marzena Mach , Paweł Wydro , Szczepan Zapotoczny

We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a…

介观与纳米尺度物理 · 物理学 2022-08-22 Xiaobo Li , Mengmeng Meng , Shaoyun Huang , Congwei Tan , Congcong Zhang , Hailin Peng , H. Q. Xu