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相关论文: Far-infrared soft mode behavior in PST thin films

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Temperature dependence of far-infrared transmission of NbN thin films deposited on MgO and Si substrates was measured at several frequencies from 0.4 up to 4.3 THz. Exponential increase of relative penetration depth at low temperatures and…

超导电性 · 物理学 2007-05-23 R. Tesar , J. Kolacek , E. Kawate , S. Benacka , S. Gazi

The temperature dependence of optical constants of titanium nitride thin film is investigated using spectroscopic ellipsometry between 1.4 to 5 eV in the temperature range 300 K to 650 K in steps of 50 K. The real and imaginary parts of the…

材料科学 · 物理学 2016-11-26 S. Tripura Sundari , R. Ramaseshan , Feby Jose , S. Dash , A. K. Tyagi

PbFe$_{1/2}$Nb$_{1/2}$O$_{3}$ (PFN) is a relaxor ferroelectric (T$_{c}$ $\sim$ 400 K) consisting of disordered magnetic Fe$^{3+}$ (S=${5\over2}$, L$\approx$0) ions resulting in a low temperature ``cluster glass" phase (W. Kleemann…

Temperature dependent (4K-300K) photoluminescence and transmission spectra are analyzed to study the effect of changing the different components of a perovskite compound, be it A, B, or X. Four different films are compared: FAMAPbSnI3,…

材料科学 · 物理学 2021-09-22 S. Sourabh , V. R. Whiteside , Y. Zhai , K. Wang , V. Yeddu , M. T. Bamidele , D. Y. Kim , M. C. Beard , I. R. Sellers

We report complex dielectric and Raman spectroscopy measurements in four samples of $\alpha$- Fe$_2$O$_3$, consisting of crystallites which are either hexagonal shaped plates or cuboids. All four samples exhibit the spin reorientation…

强关联电子 · 物理学 2019-04-17 Namrata Pattanayak , Jitender Kumar , Partha Pratim Patra , G. V. Pavan Kumar , Ashna Bajpai

Elastic softening in the paraelastic phases of Ba$_{1-x}$Sr$_{x}$TiO$_{3}$ is largest near the transition temperatures and decreases on heating smoothly over extended temperature ranges. Softening extends to the highest measured…

In Cerium-based heavy electron materials, the 4f electron's magnetic moments bind to the itinerant quasiparticles to form composite heavy quasiparticles at low temperature. The volume of the Fermi surfacein the Brillouin zone incorporates…

强关联电子 · 物理学 2013-09-03 Hong Chul Choi , B. I. Min , J. H. Shim , K. Haule , G. Kotliar

Polarized Raman scattering spectra of superconducting K$_x$Fe$_{2-y}$Se$_2$ and nonsuperconducting K$_{0.8}$Fe$_{1.8}$Co$_{0.2}$Se$_2$ single crystals were measured in a temperature range from 10 K up to 300 K. Two Raman active modes from…

PbTe crystals have a soft transverse optical phonon mode in the terahertz frequency range, which is known to efficiently decay into heat-carrying acoustic phonons, resulting in anomalously low thermal conductivity. Here, we studied this…

The temperature dependence of the first-order phonon mode of single crystal of Silicon (Si) is determined by Raman scattering in a broad temperature range of 4-623 K. Our studies reveal the anomalous red-shift of the Raman active phonon…

材料科学 · 物理学 2020-01-24 Himanshi , Birender Singh , Pradeep Kumar

Measurements of resistance vs. temperature have been carried out on a sequence of quench-condensed ultrathin films of amorphous bismuth (a-Bi). The resistance below about 0.1K was found to be temperature independent in a range of films with…

超导电性 · 物理学 2007-05-23 L. M. Hernandez , Kevin A. Parendo , A. M. Goldman

We report on the direct measurement of the electron-phonon relaxation time, {\tau}eph, in disordered TiN films. Measured values of {\tau}eph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3…

We investigate the frequency response of narrow spectral holes in a doped crystal structure as a function of temperature below 1 K. We identify a particular regime in which this response significantly deviates from the expected two-phonon…

光学 · 物理学 2024-11-27 X. Lin , M. T. Hartman , B. Pointard , R. Le Targat , P. Goldner , S. Seidelin , B. Fang , Y. Le Coq

Sol-gel deposited (010) textured polycrystalline thin films of gallium ferrite (GaFeO3 or GFO) on n-Si(100) and Pt/Si(111) substrates are characterized for room temperature multiferroism. Structural characterization using X-ray diffraction…

材料科学 · 物理学 2016-11-04 Monali Mishra , Amritendu Roy , Ashish Garg , Rajeev Gupta , Somdutta Mukherjee

With its huge entropy change and a strong interplay between magnetic order, structural and electrical properties, the first-order antiferromagnetic/ferromagnetic phase transition is a paradigmatic example of the multicaloric effect. The…

The two-temperature model (2TM) introduced by Kaganov, Lifshitz, and Tanatarov is widely used to describe the energy relaxation in the electron-phonon system of a metallic film. At the same time, the accuracy of the description of the…

介观与纳米尺度物理 · 物理学 2018-08-01 A. I. Bezuglyj , V. A. Shklovskij

The temperature-driven reorientation transition which, up to now, has been studied by use of Heisenberg-type models only, is investigated within an itinerant-electron model. We consider the Hubbard model for a thin fcc(100) film together…

强关联电子 · 物理学 2009-10-31 T. Herrmann , M. Potthoff , W. Nolting

We report a Raman scattering investigation of KTa1-xNbxO3 (x = 0.35, 0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 K to 720 K is similar to the structural phase…

材料科学 · 物理学 2010-07-16 A. Bartasyte , J. Kreisel , W. Peng , M. Guilloux-Viry

We report an investigation of hexagonal Y_(1-x)Eu_xMnO_3 ceramics with x=0, 0.1 and 0.2 using infrared and THz spectroscopies in the temperature range between 5 and 900 K. The temperature dependence of the THz permittivity reveals a kink…

材料科学 · 物理学 2012-02-13 V. Goian , S. Kamba , C. Kadlec , D. Nuzhnyy , P. Kuzel , J. Agostinho Moreira , A. Almeida , P. B. Tavares

The electronic structure of La0.8Sr0..2MnO3/SrTiO thin film, which was prepared by Laser MBE, was studied by X-ray photoemission spectra (XPS) in the temperature interval of 300 to 1000 K. Experimental results showed that the electronic…

强关联电子 · 物理学 2007-05-23 Guotai Tan , S. Dai , P. Duan , H. B. Lu , K. Xie , Y. L. Zhou , Z. H. Chen