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相关论文: Exciton lifetime in InAs/GaAs quantum dot molecule…

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Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is…

介观与纳米尺度物理 · 物理学 2009-11-10 Charles Santori , David Fattal , Jelena Vuckovic , Glenn S. Solomon , Edo Waks , Yoshihisa Yamamoto

We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a…

介观与纳米尺度物理 · 物理学 2015-05-19 S. Stobbe , T. W. Schlereth , S. Höfling , A. Forchel , J. M. Hvam , P. Lodahl

We show both experimentally and theoretically that the recently observed optically induced in-plane charge separation in quantum well (QW) structures and the exciton ring emission pattern at this charge separation boundary have an extremely…

其他凝聚态物理 · 物理学 2009-11-10 Gang Chen , Ronen Rapaport , Steven H. Simon , Loren Pfeiffer , Ken West

Two-photon interference from an InAs/InAlGaAs quantum dot (QD) emitting in the telecom C-band with a raw two-photon interference visibility of $V_{HOM}=(71.9\pm0.2)$ % is demonstrated. This is achieved by a two-fold approach: an improvement…

Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures…

We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination…

材料科学 · 物理学 2009-11-22 A. Amo , M. D. Martin , L. Vina , A. I. Toropov , K. S. Zhuravlev

Having already achieved near-unity quantum yields, with promising properties for light-emitting diode, lasing, and charge separation applications, colloidal core/shell quantum dots have great technological potential. The shell thickness and…

材料科学 · 物理学 2020-05-08 John P. Philbin , Eran Rabani

Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated…

介观与纳米尺度物理 · 物理学 2007-05-23 Y. Sidor , B. Partoens , F. M. Peeters , T. Ben , A. Ponce , D. L. Sales , S. I. Molina , D. Fuster , L. Gonzalez , Y. Gonzalez

A transition from a cylindrical quantum dot to a highly elongated quantum dash is theoretically studied here with an atomistic approach combining empirical tight binding for single particle states and configuration interaction method for…

介观与纳米尺度物理 · 物理学 2019-05-08 Michał Zieliński

We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of…

We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45ps. Compared to…

量子物理 · 物理学 2015-05-13 Mitsuru Toishi , Dirk Englund , Andrei Faraon , Jelena Vuckovic

We develop a theory of the linear optical spectrum of excitons in quantum dot molecules, including the effect of exciton-phonon coupling beyond the Markov limit. The model reproduces the general trend of the zero-phonon line broadening as a…

介观与纳米尺度物理 · 物理学 2007-05-23 Gaetano Parascandolo , Vincenzo Savona

The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the…

We report quantum coherent oscillations of photocapacitance of a double-barrier resonant tunneling heterostructure with bias at 10 K. Periodic presence and absence of sharp excitonic transitions in photocapacitance spectra with increasing…

量子气体 · 物理学 2020-09-10 Amit Bhunia , Mohit Kumar Singh , Maryam Al Huwayz , Mohamed Henini , Shouvik Datta

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs…

介观与纳米尺度物理 · 物理学 2007-05-23 N. I. Cade , H. Gotoh , H. Kamada , T. Tawara , T. Sogawa , H. Okamoto , H. Nakano

When the coupling between light and matter becomes comparable to the energy gap between different excited states they hybridize, leading to the appearance of a rich and complex phenomenology which attracted remarkable interest in recent…

About a year ago, two independent experiments [1,2], imaging indirect exciton luminescence from doped double quantum wells under applied bias and optical excitation, reported a very intriguing observation: under certain experimental…

凝聚态物理 · 物理学 2013-05-29 R. Rapaport , Gang Chen , D. Snoke , Steve H. Simon , Loren Pfeiffer , Ken West , Y. Liu , S. Denev , .

The bright exciton emission of semiconducting carbon nanotubes is appealing for optoelectronic and quantum photonic devices as well as fundamental studies of light-matter interaction in one-dimensional nanostructures. The photophysics of…

介观与纳米尺度物理 · 物理学 2017-05-09 Ibrahim Sarpkaya , Zhengyi Zhang , William Walden-Newman , Xuesi Wang , James Hone , Chee Wei Wong , Stefan Strauf

The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can…

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over…

材料科学 · 物理学 2009-11-11 R. Seguin , A. Schliwa , T. D. Germann , S. Rodt , K. Pötschke , U. W. Pohl , D. Bimberg