中文
相关论文

相关论文: Dynamical Breakup of the Fermi Surface in a doped …

200 篇论文

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

We investigate the Mott transition in weakly-coupled one-dimensional (1d) fermionic chains. Using a generalization of Dynamic Mean Field Theory, we show that the Mott gap is suppressed at some critical hopping $t_{\perp}^{c2}$. The…

强关联电子 · 物理学 2007-05-23 C. Berthod , T. Giamarchi , S. Biermann , A. Georges

We study the magnetic field driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group…

强关联电子 · 物理学 2017-09-13 W. Zhu , D. N. Sheng , Jian-Xin Zhu

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

The dynamical mean-field theory (DMFT) is employed to study the Mott transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and…

强关联电子 · 物理学 2016-08-31 M. Potthoff , W. Nolting

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

The competition between antiferromagnetism and hole motion in two-dimensional Mott insulators lies at the heart of a doping-dependent transition from an anomalous metal to a conventional Fermi liquid. Condensed matter experiments suggest…

We explore the momentum-sector-selective metal insulator transitions recently found in the eight - site dynamical cluster approximation to the two-dimensional Hubbard model. The phase diagram in the space of interaction and second-neighbor…

强关联电子 · 物理学 2009-12-04 Emanuel Gull , Olivier Parcollet , Philipp Werner , Andrew J. Millis

The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

强关联电子 · 物理学 2026-02-27 Mingzhong Lu , Yu-Feng Song , Youjin Deng , Yuan-Yao He

The density driven Mott transition is studied by means of Dynamical Mean-Field Theory in the Hubbard-Holstein model, where the Hubbard term leading to the Mott transition is supplemented by an electron-phonon (e-ph) term. We show that an…

强关联电子 · 物理学 2007-08-07 M. Capone , G. Sangiovanni , C. Castellani , C. Di Castro , M. Grilli

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

We study the relationship between the pseudogap and Fermi-surface topology in the two-dimensional Hubbard model by means of the cellular dynamical mean-field theory. We find two possible mean-field metallic solutions on a broad range of…

强关联电子 · 物理学 2018-02-12 Helena Braganca , Shiro Sakai , M. C. O. Aguiar , Marcello Civelli

The underlying Fermi surface is a key concept for strongly-interacting electron models and has been introduced to generalize the usual notion of the Fermi surface to generic (superconducting or insulating) systems. By using improved…

强关联电子 · 物理学 2013-05-30 Luca F. Tocchio , Federico Becca , Claudius Gros

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff
‹ 上一页 1 2 3 10 下一页 ›