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The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…

强关联电子 · 物理学 2009-11-10 Thomas Pruschke , Ralf Bulla

Near a Mott transition, strong electron correlations may enhance Cooper pairing. This is demonstrated in the Dynamical Mean Field Theory solution of a twofold-orbital degenerate Hubbard model with inverted Hund's rules on-site exchange,…

强关联电子 · 物理学 2007-08-07 M. Capone , M. Fabrizio , C. Castellani , E. Tosatti

Density of states, dynamic (optical) conductivity and phase diagram of paramagnetic two-dimensional Anderson-Hubbard model with strong correlations and disorder are analyzed within the generalized dynamical mean-field theory (DMFT+Sigma…

强关联电子 · 物理学 2010-05-17 E. Z. Kuchinskii , N. A. Kuleeva , I. A. Nekrasov , M. V. Sadovskii

Density of states, dynamic (optical) conductivity and phase diagram of strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT+\Sigma…

强关联电子 · 物理学 2009-11-13 E. Z. Kuchinskii , I. A. Nekrasov , M. V. Sadovskii

We derive and apply a general scheme for mapping a setup consisting of a half-filled single level quantum dot coupled to one normal metallic and two superconducting phase-biased leads onto an ordinary half-filled single impurity Anderson…

介观与纳米尺度物理 · 物理学 2021-08-03 Peter Zalom , Vladislav Pokorný , Tomáš Novotný

We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…

强关联电子 · 物理学 2021-06-24 Nathan Giovanni , Marcello Civelli , Maria C. O. Aguiar

We solve by Dynamical Mean Field Theory a toy-model which has a phase diagram strikingly similar to that of high $T_c$ superconductors: a bell-shaped superconducting region adjacent the Mott insulator and a normal phase that evolves from a…

超导电性 · 物理学 2008-03-24 Marco Schiro' , Massimo Capone , Michele Fabrizio , Claudio Castellani

The single channel Anderson impurity model is a standard model for the description of magnetic impurities in metallic systems. Usually, the bandwidth represents the largest energy scale of the problem. In this paper, we analyze the limit of…

强关联电子 · 物理学 2009-10-31 W. Hofstetter , S. Kehrein

We investigate the physics of a magnetic impurity with spin 1/2 in a correlated metallic host. Describing the band by a Hubbard Hamiltonian, the problem is analyzed using dynamical mean-field-theory in combination with Wilson's…

强关联电子 · 物理学 2009-10-31 W. Hofstetter , R. Bulla , D. Vollhardt

We consider the Hubbard model with a magnetic Anderson impurity coupled to a lattice site. In the case of infinite dimensions, one-particle correlations of the impurity electron are described by the effective Hamiltonian of the two-impurity…

强关联电子 · 物理学 2009-10-30 Benny Davidovich , V. Zevin

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

We investigate a Kondo lattice model with correlated conduction electrons. Within dynamical mean-field theory the model maps onto an impurity model where the host has to be determined self-consistently. This impurity model can be derived…

强关联电子 · 物理学 2009-10-31 Tom Schork , Stefan Blawid , Jun-ichi Igarashi

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

The diagrammatic theory is proposed for the strongly correlated impurity Anderson model. The strongly correlated impurity electrons are hybridized with free conduction electrons. For this system the new diagrammatic approach is formulated.…

强关联电子 · 物理学 2007-05-23 V. A. Moskalenko , P. Entel , D. F. Digor , L. A. Dohotaru , R. Citro

Anderson localization is predicted to enhance the critical temperature of disordered superconductors. Despite a huge body of theoretical work based on non-linear sigma models, experiments are lacking to understand correlated electrons in…

A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…

强关联电子 · 物理学 2009-11-11 Hideo Yoshioka , Hitoshi Seo , Hidetoshi Fukuyama

A conducting 1D line or 2D plane inside (or on the surface of) an insulator is considered.Impurities displace the charges inside the insulator. This results in a long-range fluctuating electric field acting on the conducting line (plane).…

无序系统与神经网络 · 物理学 2007-05-23 V. V. Flambaum

We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling,…

凝聚态物理 · 物理学 2007-05-23 Jaichul Yi Lizeng Zhang , Geoff S Canright

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

We examine the properties of an infinite-$U$ Anderson impurity coupled to both normal and superconducting metals. Both the cases of a quantum dot and a quantum point contact containing an impurity are considered; for the latter, we study…

强关联电子 · 物理学 2009-10-31 Aashish A. Clerk , Vinay Ambegaokar , Selman Hershfield
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