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We present a theoretical study of the magnetic band structure of conduction and valence states in Quantum Well Wires in high magnetic fields. We show that hole mixing results in a very complex behavior of valence edge states with respect to…

凝聚态物理 · 物理学 2009-10-28 G. Goldoni , A. Fasolino

The first study of two-dimensional electron gas in surface layers on HgMnTe with inverted bands is carried out experimentally and theoretically. It is shown that the structure of investigated capacitance magnetooscillations in HgMnTe MOS…

凝聚态物理 · 物理学 2007-05-23 V. F. Radantsev , A. M. Yafyasov , V. B. Bogevolnov , I. M. Ivankiv

HgTe/HgCdTe quantum wells with the inverted band structure have been probed using far infrared magneto-spectroscopy. Realistic calculations of Landau level diagrams have been performed to identify the observed transitions. Investigations…

介观与纳米尺度物理 · 物理学 2011-03-15 M. Orlita , K. Masztalerz , C. Faugeras , M. Potemski , E. G. Novik , C. Brüne , H. Buhmann , L. W. Molenkamp

In this paper the 3D- and 2D- behavior of wide quantum wells which consist of one period of a PbTe nipi-structure is studied theoretically and experimentally. A simple model combines the 2D- subband levels and the 3D-Landau levels in order…

材料科学 · 物理学 2008-02-03 J. Oswald , M. Pippan , G. Heigl , G. Span , T. Stellberger

We perform hybrid functional and quasi-particle band structure calculations with spin-orbit interaction to investigate the band structures of Mg2Si, Mg2Ge, and Mg2Sn. For all Mg2X materials, where X = Si, Ge, and Sn, the characteristics of…

The dependence of valence band structures of Ge$_{1-x}$Sn$_x$ with 0 $\leq$ $x$ $\leq$ 0.2 on Sn content, biaxial strain, and substrate orientation is calculated using the nonlocal empirical pseudopotential method. The first valence subband…

计算物理 · 物理学 2017-03-07 H-S Lan , C W Liu

Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These…

介观与纳米尺度物理 · 物理学 2021-09-29 Jan Gospodaric , Alexey Shuvaev , Nikolai N. Mikhailov , Ze D. Kvon , Elena G. Novik , Andrei Pimenov

The results of an experimental study of the energy spectrum of the valence band in a HgTe quantum well of width d<6.3 nm with normal spectrum in the presence of a strong spin-orbit splitting are reported. The analysis of the temperature,…

We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum…

材料科学 · 物理学 2009-11-11 C. E. Pryor , M. -E. Pistol

Electron mobility, energy spectra and intrinsic carrier concentrations in the n-type Hg0.32Cd0.68Te / Hg1-xCdxTe / Hg0.32Cd0.68Te quantum well (QW) in semi-metallic state are numerically modeled. Energy spectra and wave functions were…

材料科学 · 物理学 2015-11-25 E. O. Melezhik , J. V. Gumenjuk-Sichevska , F. F. Sizov

We report results of systematic measurements of charge transport properties of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure transport is…

介观与纳米尺度物理 · 物理学 2018-10-31 V. A. Prudkoglyad , E. B. Olshanetsky , Z. D. Kvon , V. M. Pudalov , N. N. Michailov , S. A. Dvoretsky

We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands…

介观与纳米尺度物理 · 物理学 2016-03-14 M. V. Yakunin , A. V. Suslov , M. R. Popov , E. G. Novik , S. A. Dvoretsky , N. N. Mikhailov

Quantum wells formed by layers of HgTe between Hg$_{1-x}$Cd$_x$Te barriers lead to two-dimensional (2D) topological insulators, as predicted by the BHZ model. Here, we theoretically and experimentally investigate the characteristics of…

介观与纳米尺度物理 · 物理学 2024-05-24 G. J. Ferreira , D. R. Candido , F. G. G. Hernandez , G. M. Gusev , E. B. Olshanetsky , N. N. Mikhailov , S. A. Dvoretsky

The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low…

Motivated by recent experiments [Zhang \textit{et al.}, Phys. Rev. Lett. \textbf{95}, 216801 (2005) and Ellenberger \textit{et al.}, cond-mat/0602271] reporting novel ringlike structures in the density--magnetic-field ($n_{2D}$\emph{--B})…

介观与纳米尺度物理 · 物理学 2015-06-25 Gerson J. Ferreira , Henrique J. P. Freire , J. Carlos Egues

Oscillations of the real component of AC conductivity $\sigma_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well,…

介观与纳米尺度物理 · 物理学 2019-09-04 I. L. Drichko , I. Yu. Smirnov , A. V. Suslov , M. O. Nestoklon , D. Kamburov , K. W. Baldwin , L. N. Pfeiffer , K. W. West , L. E. Golub

The 3D- and 2D- behaviour of wide parabolic PbTe single quantum wells, which consist of PbTe p-n-p-structures, are studied theoretically and experimentally. A simple model combines the 2D- subband levels and the 3D-Landau levels in order to…

材料科学 · 物理学 2015-06-25 J. Oswald , G. Heigl , M. Pippan , G. Span , T. Stellberger , D. K. Maude , J. C. Portal

WTe$_2$ stands out as a semimetal presenting Fermi level quantum oscillations in most measured quantities under magnetic fields. However, the electronic band structure above and below the Fermi level has not been explored completely. Here…

The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological…

介观与纳米尺度物理 · 物理学 2021-01-14 G. M. Gusev , E. B. Olshanetsky , F. G. G. Hernandez , O. E. Raichev , N. N. Mikhailov , S. A. Dvoretsky

HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in…

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