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相关论文: Momentum space anisotropy in doped Mott insulators

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This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…

强关联电子 · 物理学 2009-01-08 J. Sirker , J. Damerau , A. Klümper

We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…

强关联电子 · 物理学 2009-11-10 K. Haule , A. Rosch , J. Kroha , P. Wölfle

We study the superconducting state of the hole-doped two-dimensional Hubbard model using Cellular Dynamical Mean Field Theory, with the Lanczos method as impurity solver. In the under-doped regime, we find a natural decomposition of the…

强关联电子 · 物理学 2008-02-04 M. Civelli , M. Capone , A. Georges , K. Haule , O. Parcollet , T. D. Stanescu , G. Kotliar

We study a ground-state ansatz for the single-hole doped $t$-$J$ model in two dimensions via a variational Monte Carlo (VMC) method. Such a single-hole wave function possesses finite angular momenta generated by hidden spin currents, which…

强关联电子 · 物理学 2019-07-04 Shuai Chen , Qing-Rui Wang , Yang Qi , D. N. Sheng , Zheng-Yu Weng

A microscopic theory is presented for the local moment formation near a non-magnetic impurity or a copper defect in high-T_c superconductors. We use a renormalized meanfield theory of the t-J model for a doped Mott insulator and study the…

强关联电子 · 物理学 2009-11-07 Ziqiang Wang , Patrick A. Lee

The internal structure of doped holes in the Mott insulator may provide important insight into the physics of doped cuprates. Its observability via a single-particle probe by scanning tunneling spectroscopy (STS) and angle-resolved…

强关联电子 · 物理学 2024-08-27 Jing-Yu Zhao , Zheng-Yu Weng

Understanding pairing in the strong-coupling regime of doped Mott insulators remains an open problem in the context of cuprate superconductors. We perform ultra-high resolution numerical simulations of spectral functions in the highly…

强关联电子 · 物理学 2026-03-16 Pit Bermes , Sebastian Paeckel , Annabelle Bohrdt , Lukas Homeier , Fabian Grusdt

It has become clear in the past several years that the cuprates show many unusual properties, both in the normal and superconducting states, especially in the underdoped region. In particular, gap-like behavior is observed in magnetic…

强关联电子 · 物理学 2009-10-31 Patrick A. Lee

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

In the generalized-tJ model the effect of the large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro , Xiao-Gang Wen

Cluster dynamical mean field calculations based on 2, 4, 8 and 16 site clusters are used to analyze the doping-driven metal-insulator transition in the two dimensional Hubbard model. Comparison of results obtained on different clusters…

强关联电子 · 物理学 2010-10-04 Emanuel Gull , Michel Ferrero , Olivier Parcollet , Antoine Georges , Andrew J. Millis

We study possible charge instabilities in doped Mott insulators by employing the two-dimensional t-J model with a positive value of the next nearest-neighbor hopping integral t' on a square lattice, which is applicable to electron-doped…

超导电性 · 物理学 2014-12-04 Matias Bejas , Andres Greco , Hiroyuki Yamase

We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum…

强关联电子 · 物理学 2018-10-22 Wayne Zheng , Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

Many emergent phenomena appear in doped Mott insulators near the insulator-to-metal transition. In high-temperature cuprate superconductors, superconductivity arises when antiferromagnetic (AFM) order is gradually suppressed by carrier…

For the $t$-$J$ model, variational wave functions can generally be constructed based on an accurate description of antiferromagnetism (AFM) at half-filling and an exact phase-string sign structure under doping. The single-hole-doped and…

强关联电子 · 物理学 2026-02-25 Can Cui , Jing-Yu Zhao , Zheng-Yu Weng

We study the hole and magnon spectral functions as a function of hole doping in the two-dimensional (2D) t-J and t-t'-t"-J models working within the limits of the spin-wave theory, by linearizing the hole-spin-deviation interaction and by…

强关联电子 · 物理学 2015-05-28 Satyaki Kar , Efstratios Manousakis

Recent scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e. nano-scale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-Tc…

超导电性 · 物理学 2009-11-07 Ziqiang Wang , Jan R. Engelbrecht , Shancai Wang , Hong Ding , Shuheng H. Pan
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