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A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these…

介观与纳米尺度物理 · 物理学 2025-03-18 Sofie Kölling , Florian R. Westerhof , Alexander Brinkman

The conductance of a ballistic elliptically shaped quantum wire is investigated theoretically. It is shown that the effect of the curvature results in strong oscillating dependence of the conductance on the applied bias.

介观与纳米尺度物理 · 物理学 2011-07-26 S. N. Shevchenko , Yu. A. Kolesnichenko

Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…

介观与纳米尺度物理 · 物理学 2025-08-29 Phillip Mercebach , Sun-Yong Hwang , Bo Lu , Björn Sothmann , Yukio Tanaka , Pablo Burset

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this…

We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…

介观与纳米尺度物理 · 物理学 2007-09-28 Daniel Urban , Matthias Braun , Jürgen König

In quantum Hall systems with two narrow constrictions, tunneling between opposite edges can give rise to quantum interference and Aharonov-Bohm-like oscillations of the conductance. When there is an integer quantized Hall state within the…

介观与纳米尺度物理 · 物理学 2015-06-25 B. Rosenow , B. I. Halperin

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , Z. K. Keane , J. W. Ciszek , L. Cheng , M. P. Stewart , J. M. Tour , D. Natelson

Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface…

超导电性 · 物理学 2021-05-27 Erik Piatti

Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…

量子物理 · 物理学 2021-12-03 Rozhin Yousefjani , Sougato Bose , Abolfazl Bayat

We investigate the ballistic electron transport in a two dimensional Quantum Wire under the action of an electric field ($E_y$). We demonstrate how the presence of a Spin Orbit coupling, due to the uniform electric confinement field gives a…

介观与纳米尺度物理 · 物理学 2009-11-11 S. Bellucci , P. Onorato

Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven…

In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However…

介观与纳米尺度物理 · 物理学 2016-10-20 S. I. Dorozhkin , A. A. Kapustin , V. Umansky , K. von Klitzing , J. H. Smet

We study transport properties of the helical edge channels of a quantum spin Hall (QSH) insulator, in the presence of electron-electron interactions and weak, local Rashba spin-orbit coupling. The combination of the two allows for inelastic…

介观与纳米尺度物理 · 物理学 2016-01-20 Florian Geissler , François Crépin , Björn Trauzettel

The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the…

介观与纳米尺度物理 · 物理学 2022-10-12 Paul L. J. Helgers , James A. H. Stotz , Haruki Sanada , Yoji Kunihashi , Klaus Biermann , Paulo V. Santos

Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly…

We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure which we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming…

介观与纳米尺度物理 · 物理学 2025-06-24 S. R. Harrigan , F. Sfigakis , L. Tian , N. Sherlekar , B. Cunard , M. C. Tam , H. -S. Kim , Z. Wasilewski , M. E. Reimer , J. Baugh

Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…

凝聚态物理 · 物理学 2009-10-28 M. Fricke , A. Lorke , J. P. Kotthaus , G. Medeiros-Ribeiro , P. M. Petroff

We show theoretically that weak quantum fluctuations induced by a non-symmetric electromagnetic environment may lead to a quantized transconductance of a multi-terminal quantum contact rather than to a blockade of transport in the contact.…

介观与纳米尺度物理 · 物理学 2025-12-08 Klaiv Mertiri , Yuli V. Nazarov

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…

介观与纳米尺度物理 · 物理学 2008-06-20 Andrei Borzdov , Dmitry Pozdnyakov , Vladimir Borzdov