相关论文: Weak Localization Thickness Measurements of Si:P D…

The dependence of the structure of a phospholipid layer (DSPC and SOPC) adsorbed on a hydrosol substrate on the concentration of NaOH in a solution of 5-nm silica particles has been studied by X-ray reflectrometry with the use of…

Weak gravitational lensing analyses are fundamentally limited by the intrinsic, non-Gaussian distribution of galaxy shapes. We explore alternative statistics for samples of ellipticity measurements that are unbiased, efficient, and robust.…

We measure the weak lensing shear around galaxy troughs, i.e. the radial alignment of background galaxies relative to underdensities in projections of the foreground galaxy field over a wide range of redshift in Science Verification data…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…

The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However,…

Helicity-dependent photocurrent delta-I has been detected successfully under experimental configuration that a circularly polarized light beam is impinged with a right angle on a cleaved sidewall of the Fe/x-AlOx/GaAs-based n-i-p…

We exploit millimeter wave technology to measure the reflection and transmission response of random dielectric media. Our samples are easily constructed from random stacks of identical, sub-wavelength quartz and Teflon wafers. The…

Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature…

A simplified theoretical model for the constant-magnitude steady-state surface photovoltage (SPV) technique is developed. Emphasis is placed on the determination of the minority carrier diffusion length L in the particular case for which…

Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV…

We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D.…

Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible…

The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the…

We describe a simple and fast method to correct ellipticity measurements of galaxies from the distortion by the instrumental and atmospheric point spread function (PSF), in view of weak lensing shear measurements. The method performs a…

We measured the thickness of an insensitive surface layer of a PIN photodiode, Hamamatsu S3590-06, used in the Tokyo Axion Helioscope. We made alpha-particles impinge on the PIN photodiode in various incidence angles and measured the pulse…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…

We report operating temperatures and heating coefficients measured in a multi-layer black phosphorus device as a function of injected electrical power. By combining micro-Raman spectroscopy and electrical transport measurements, we have…

We study in this paper the localization of light and the dielectric properties of thin metal-dielectric composites at the percolation threshold and around a resonant frequency where the conductivities of the two components are of the same…

Calculating the density-density correlation function for disordered wires, we study localization properties of wave functions in a magnetic field. The supersymmetry technique combined with the transfer matrix method is used. It is…