相关论文: Weak Localization Thickness Measurements of Si:P D…
Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the…
Electronic transport in highly doped but still insulating silicon at low temperatures is dominated by hopping between localized states; it serves as a model system of a disordered solid for which the electronic interaction can be…
When the thickness of the layer is smaller than the electrons mean free path, the morphology affects the conductivity directly based on the layer thickness. This issue provides basis in order to estimate the thickness of the layer by…
We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the…
Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T,…
We perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material…
The transmission of light through low coverage regular and random arrays of glass supported silica micropillars of diameters 10 to 40 \micro\meter and height 10 \micro\meter is studied experimentally. Angle-resolved measurements of the…
Thin films of the pyrochlore iridates along the [111] direction have drawn significant attention to investigate exotic correlated topological phenomena. Here, we report the fabrication of Eu$_2$Ir$_2$O$_7$ thin films via reactive solid…
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot…
We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more…
Previous experimental work on a two-dimensional (2D) electron gas in a Si-on-sapphire device led to the conclusion that both conductivity and phonon drag thermopower $S^g$ are affected to the same relative extent by weak localization. The…
We show the theoretical and experimental combination of acoustic and optical methods for the in situ quantitative evaluation of the density, the viscosity and the thickness of soft layers adsorbed on chemically tailored metal surfaces. For…
We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a…
Using the supersymmetry technique combined with the transfer matrix method we calculate different physical quantities characterizing localization in disordered wires. In particular, we analyze the density-density correlation function and…
Theoretically and experimentally we have proved the existence of optimal thickness of the porous layer used as an anti-reflection coating in solar cells. We have taken into account the joint mechanisms of generation and recombination of…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
Precise radial velocity measurements (delta v/c ~ 10^{-7}) of FeII lines in damped Ly-alpha systems from very high quality VLT/UVES spectra of quasars HE0515-4414 and Q1101-264 are used to probe cosmological time dependence of the fine…
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum $\delta$-doped layers in silicon with densities above the solid solubility limit. We use density functional theory to…
We are developing an X-ray polarimeter using micro-pixel CMOS sensors for solar flare X-ray polarimetry. The system consists of a 2.5-$\mu$m pixel CMOS image sensor with a 12.8$\times$12.8 mm$^2$ imaging area and a readout system based on a…
We probe the evolution of the fine-structure constant, alpha, with cosmic time. Accurate positions of the FeII lines 1608, 2382,and 2600 A are measured in the z = 1.84 absorption system from a high-resolution (FWHM = 3.8 km/s) and high…