相关论文: Vacancy complexes with oversized impurities in Si …

Although the clean Si(001) and Ge(001) surfaces are very similar, experiments to date have shown that dimer-vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(001), but not on Ge(001). In this paper, we perform…

We study the density of states in disordered s-wave superconductors with a small gap anisotropy. Disorder comes in the form of common nonmagnetic scatterers and pairing-potential impurities, which interact with electrons via an electric…

We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum dot systems, where each dot contains one or two electrons and a single charged impurity in the…

Magnetic impurities create in-gap states on superconductors. Recent experiments explore the topological properties of one-dimensional arrays of magnetic impurities on superconductors, because in certain regimes p-wave pairing can be locally…

This work investigates the behavior of impurities in edge plasma of tokamaks using high-resolution numerical simulations based on Hasegawa--Wakatani equations. Specifically, it focuses on the behavior of inertial particles, which has not…

A new method is proposed for practical calculation of the effective interaction between impurity scatterers in superconductors, based on algebraic properties of related Nambu matrices for Green functions. In particular, we show that the…

Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation…

We are investigating the properties of vacancies in solid 4He with the exact zero temperature SPIGS method. Our aim is to study the possibility of phase--separation between vacancies and the perfect crystal. We find a significant…

Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…

The bonding properties of tilt boundary in poly-silicon and the effect of interstitial impurities are investigated by first-principles. In order to obtain thorough information on the nature of chemical bondings in these solid systems, an…

The single impurity effect on the graphene-based superconductor is studied theoretically. Four different pairing symmetries are discussed. Sharp resonance peaks are found near the impurity site for the $d+id$-wave pairing symmetry and the…

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the…

Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top…

We characterize germanium-vacancy GeVn complexes in silicon using first-principles Density Functional Theory calculations with screening-dependent hybrid functionals. We report on the local geometry and electronic excited states of these…

The electronic structure near a single classical magnetic impurity in a superconductor is determined using a fully self-consistent Koster-Slater algorithm. Localized excited states are found within the energy gap which are half electron and…

We present a model of two Anderson impurities coupled to and through a superconducting island. The model parametrizes the strength of the coupling between impurity sites, allowing it to represent a variable distance between the impurities.…

We calculate the singlet-triplet splitting for a couple of two-dimensional electrons in the potential of two positively charged impurities which are located out of plane. We consider different relations between vertical distances of…

We describe a method for calculating, within density functional theory, the electronic structure associated with typical defects which substitute for Cu in the CuO2 planes of high-Tc superconducting materials. The focus is primarily on…

The existence of non-substitutional $\beta$-Sn defects in Ge$_{1-x}$Sn$_{x}$ was confirmed by emission channeling experiments [Decoster et al., Phys. Rev. B 81, 155204 (2010)], which established that although most Sn enters substitutionally…

We investigate the effective interaction between two localized spin impurities embedded in a frustrated spin-1/2 $J_1\!-\!J_2$ Heisenberg chain. Treating the impurity spins as classical moments coupled locally to the host, we combine…