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We explore the electronic structure and transport properties of a metal on top of a (weakly coupled) two-dimensional topological insulator. Unlike the widely studied junctions between topological non-trivial materials, the systems studied…

介观与纳米尺度物理 · 物理学 2016-03-02 L. E. F. Foa Torres , V. Dal Lago , E. Suárez Morell

Topological superconductors differ from topologically trivial ones for the presence of topologically protected zero-energy modes. To date, experimental evidence of topological superconductivity in nanostructures has been mainly obtained by…

介观与纳米尺度物理 · 物理学 2016-07-22 Pasquale Marra , Roberta Citro , Alessandro Braggio

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We study coherent spin transport through helical edge states of topological insulator tunnel-coupled to metallic leads. We demonstrate that unpolarized incoming electron beam acquires finite polarization after transmission through such a…

介观与纳米尺度物理 · 物理学 2021-11-10 R. A. Niyazov , D. N. Aristov , V. Yu. Kachorovskii

Topological insulators and topological superconductors display various topological phases that are characterized by different Chern numbers or by gapless edge states. In this work we show that various quantum information methods such as the…

强关联电子 · 物理学 2015-03-18 T. P. Oliveira , P. D. Sacramento

We consider the analogy between the topological phase transition which occurs as a function of spatial coordinate on a surface of a non-trivial insulator, and the one which occurs in the bulk due to the change of internal parameters (such…

材料科学 · 物理学 2012-11-06 Stanislav Chadov , Janos Kiss , Jürgen Kübler , Claudia Felser

We study theoretically the transport of the one-dimensional single-channel interacting electron gas through a strong potential barrier in the parameter regime where the spin sector of the low-energy Luttinger liquid theory is gapped by…

强关联电子 · 物理学 2018-03-07 N. Kainaris , S. T. Carr , A. D. Mirlin

We construct a metamaterial from radio-frequency harmonic oscillators, and find two topologically distinct phases resulting from dissipation engineered into the system. These phases are distinguished by a quantized value of bulk energy…

介观与纳米尺度物理 · 物理学 2018-06-20 Eric I. Rosenthal , Nicole K. Ehrlich , Mark S. Rudner , Andrew P. Higginbotham , K. W. Lehnert

We investigate the interplay between the strong correlation and the spin-orbital coupling in the Kane-Mele-Hubbard model and obtain the qualitative phase diagram via the variational cluster approach. We identify, through an increase of the…

强关联电子 · 物理学 2011-06-30 Shun-Li Yu , X. C. Xie , Jian-Xin Li

Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the…

强关联电子 · 物理学 2018-03-29 Wenhan Zhang , M. X. Chen , Jixia Dai , Xueyun Wang , Zhicheng Zhong , Sang-Wook Cheong , Weida Wu

We describe a formulation to deduce the phase shifts, which determine the ground-state properties of interacting quantum-dot systems with the inversion symmetry, from the fixed-point eigenvalues of the numerical renormalization group (NRG).…

介观与纳米尺度物理 · 物理学 2016-08-31 A. Oguri , Y. Nisikawa , A. C. Hewson

We investigate the ground-state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix…

强关联电子 · 物理学 2009-11-10 A. P. Kampf , M. Sekania , G. I. Japaridze , Ph. Brune

In the two-dimensional case the transition between ordinary and topological insulator states can be described by a massive Dirac model with the mass term changing its sign at the transition point. We theoretically investigate how such a…

介观与纳米尺度物理 · 物理学 2015-03-17 G. Tkachov , E. M. Hankiewicz

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We present data of transport measurements through a metallic nanobridge exhibiting diffusive electron transport. A logarithmic temperature dependence and a zero-bias anomaly in the differential conductance are observed, independent of…

介观与纳米尺度物理 · 物理学 2020-04-20 H. B. Weber , R. Häussler , H. v. Löhneysen , J. Kroha

We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an…

介观与纳米尺度物理 · 物理学 2015-06-23 Neal E. Staley , Nirat Ray , Marc A. Kastner , Micah P. Hanson , Arthur C. Gossard

We determine the quantum phase diagram of the Hubbard chain with electron-hole symmetric correlated hopping at 1/2- and 1/4-filling using geometric concepts and continuum limit field theory. The long distance behavior of various correlation…

凝聚态物理 · 物理学 2007-05-23 A. A. Aligia , K. Hallberg , C. D. Batista , G. Ortiz

Advances in the next generation of mesoscopic electronics require an understanding of topological phases in inhomogeneous media and the principles that govern them. Motivated by the nature of motifs available in printable conducting inks,…

介观与纳米尺度物理 · 物理学 2026-01-16 Nirnoy Basak , Ritajit Kundu , Basudeb Mondal , Adhip Agarwala

We study the conductance through finite Aharonov-Bohm rings of interacting electrons weakly coupled to non-interacting leads at two arbitrary sites. This model can describe an array of quantum dots with a large charging energy compared to…

强关联电子 · 物理学 2009-10-15 Julián Rincón , A. A. Aligia , K. Hallberg

We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point…

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