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The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory using the H\"older mean local density of states. A critical disorder strength is determined in the Anderson-Falicov-Kimball model…

强关联电子 · 物理学 2009-11-13 Andre M. C. Souza , Daniela de O. Maionchi , Hans J. Herrmann

Several new aspects of the subtle interplay between electronic correlations and disorder are reviewed. First, the dynamical mean-field theory (DMFT)together with the geometrically averaged ("typical") local density of states is employed to…

强关联电子 · 物理学 2015-05-18 K. Byczuk , W. Hofstetter , U. Yu , D. Vollhardt

The role of Coulomb disorder is analysed in the Anderson-Falicov-Kimball model. Phase diagrams of correlated and disordered electron systems are calculated within dynamical mean-field theory applied to the Bethe lattice, in which…

强关联电子 · 物理学 2016-03-14 Rubens D. B. Carvalho , Guilherme M. A. Almeida , Andre M. C. Souza

Density of states, dynamic (optical) conductivity and phase diagram of strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT+\Sigma…

强关联电子 · 物理学 2009-11-13 E. Z. Kuchinskii , I. A. Nekrasov , M. V. Sadovskii

The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean…

强关联电子 · 物理学 2015-09-25 Helena Braganca , M. C. O. Aguiar , J. Vucicevic , D. Tanaskovic , V. Dobrosavljevic

We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…

强关联电子 · 物理学 2021-06-24 Nathan Giovanni , Marcello Civelli , Maria C. O. Aguiar

Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both, local fluctuations due to disorder…

无序系统与神经网络 · 物理学 2010-09-15 Denis Semmler , Krzysztof Byczuk , Walter Hofstetter

The model of a strongly correlated system in which periodically spaced Anderson-Hubbard centers are introduced into narrow-band metal is considered. Besides the interactions between localized magnetic moments and strong on-site Coulomb…

强关联电子 · 物理学 2023-07-19 Yuriy Skorenkyy , Leonid Didukh , Oleksandr Kramar , Yuriy Dovhopyaty

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

The ground state phase diagrams of the Falicov--Kimball model with local disorder is derived within the dynamical mean--field theory and using the geometrically averaged (''typical'') local density of states. Correlated metal, Mott…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk

The phase diagram of correlated, disordered electron systems is calculated within dynamical mean-field theory for the Anderson-Falicov-Kimball model with nearest-neighbors and next-nearest-neighbors hopping. The half-filled band is analyzed…

强关联电子 · 物理学 2009-11-13 D. O. Maionchi , A. M. C. Souza , H. J. Herrmann , R. N. da Costa Filho

We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…

强关联电子 · 物理学 2015-05-13 Maria Elisabetta Pezzoli , Federico Becca

We investigate quantum phase transitions in the extended periodic Anderson model, which includes electron correlations within and between itinerant and localized bands. We calculate zero and finite temperature properties of the system using…

强关联电子 · 物理学 2009-11-13 Akihisa Koga , Norio Kawakami , Robert Peters , Thomas Pruschke

The periodic Anderson model (PAM) is studied within the framework of dynamical mean-field theory, with particular emphasis on the interaction-driven Mott transition it contains, and on resultant Mott insulators of both Mott-Hubbard and…

强关联电子 · 物理学 2016-12-15 David E. Logan , Martin R. Galpin , Jonathan Mannouch

Metal-insulator transitions driven by disorder (Delta) and/or by electron correlations (U) are investigated within the Anderson-Hubbard model with local binary-alloy disorder using a simple but consistent mean-field approach. The Delta-U…

强关联电子 · 物理学 2009-11-10 Matthias Balzer , Michael Potthoff

A one-dimensional model of interacting electrons with on-site $U$, nearest-neighbor $V$, and correlated-hopping interaction $T^{\ast}$ is studied at half-filling using the continuum-limit field theory approach. The ground state phase…

强关联电子 · 物理学 2009-10-31 G. I. Japaridze , A. P. Kampf

The Anderson--Hubbard Hamiltonian at half--filling is investigated within dynamical mean--field theory at zero temperature. The local density of states is calculated by taking the geometric and arithmetic mean, respectively. The…

强关联电子 · 物理学 2009-11-11 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…

强关联电子 · 物理学 2021-10-04 G. A. Canella , V. V. França

The density driven Mott transition is studied by means of Dynamical Mean-Field Theory in the Hubbard-Holstein model, where the Hubbard term leading to the Mott transition is supplemented by an electron-phonon (e-ph) term. We show that an…

强关联电子 · 物理学 2007-08-07 M. Capone , G. Sangiovanni , C. Castellani , C. Di Castro , M. Grilli
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