相关论文: Ge growth on ion-irradiated Si self-affine fractal…
Thin films of Fe3O4 have been deposited on single crystal MgO (100) and Si (100) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly <111>…
Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that…
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…
We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide…
We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally…
The specular reflectivity of slow, metastable neon atoms from a silicon surface was found to increase markedly when the flat surface was replaced by a grating structure with parallel narrow ridges. For a surface with ridges that have a…
A great deal of interest is directed nowadays towards the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaining reliable qubits as building blocks. The realization of…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
Solid-phase epitaxial crystallization of amorphous Si layers on a crystalline Si substrate during B-ion irradiation is investigated over the temperature range 293 - 573 K. Regrowth occurs at all measured temperatures, with activation energy…
Incorporation of $\mathrm{Al_{y}Ga_{1-y}N}$ (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approaches to eliminate the defects arising from film-lattice…
We studied the growth and ordering of a Pb layer deposited on Cu(001) at 150 K. Contrary to the case of adsorption of Pb at room temperature, islands readily form. These islands order in a high-order commensurate structure of symmetry (…
Techniques for mass-production of large area graphene using an industrial scale thin film deposition tool could be the key to the practical realization of a wide range of technological applications of this material. Here, we demonstrate the…
The atomic interaction and magnetic properties of ultrathin Fe films grown on cleaved and polished MgO(100) surfaces were studied by conversion electron M\"{o}ssbauer spectroscopy (CEMS) in broad temperature range. Fe with different layer…
We report the results of GIXRR, UV-VIS NIR and XPS measurements on Si and Ge thin films of various thicknesses. While GIXRR measurements show no presence of oxide on the top of these films, XPS measurements show small amount of oxides.…
Nickel islands are grown on W(110) at elevated temperatures. Islands with a thickness of two layers are investigated with scanning tunneling microscopy. Spectroscopic measurements reveal that nanometer sized areas of the islands exhibit…
Peculiarities of formation of inclusions of amorphous Si (a-Si) phase in Si-rich Si oxynitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are studied by combined Raman scattering and infrared (IR) absorption…
We report a detailed study of surface and interface properties of pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm formation of a porous layer is…
Since an ion-beam is a viable attractive alternative to other material surface patterning techniques like an electron-beam, a study of the structure, composition and dimension of patterned lines created on surfaces of Si and SrTiO3 wafers…
We investigate the morphologies of the Ge(001) surface that are produced by bombardment with a normally incident, broad argon ion beam at sample temperatures above the recrystallization temperature. Two previously-observed kinds of…
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000{\deg}C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite…