相关论文: Field-Induced Resistive Switching in Metal-Oxide I…
The presence of mobile ions in perovskites is well known to influence the device electrostatics leading to a wide variety of anomalous characteristics related to hysteresis, efficiency degradation, low frequency capacitance, large signal…
We investigate the mutual proximity effect in a normal metal contacted to a superconductor through a magnetic interface. Analytical and self-consistent numerical results are presented, and we consider both the diffusive and ballistic…
We show that the Rashba effect at the polar perovskite surfaces and interfaces can be tuned by manipulating the two-dimensional electron gas (2DEG) by an applied electric field, using it to draw the 2DEG out to the surface or push it deeper…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
We present an ab initio study of the (001) interfaces between two insulating perovskites, the polar LaAlO3 and the nonpolar SrTiO3. We observe an insulating-to-metallic transition above a critical LaAlO3 thickness. We explain that the high…
Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics. To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data…
We examine the enhancement of the interfacial superconductivity between LaAlO$_{3}$ and SrTiO$_{3}$ by an effective electric field. Through the breaking of inversion symmetry at the interface, we show that a term coupling the superfluid…
Interference of proximity induced superconducting correlations in mesoscopic metallic rings is sensitive to the magnetic flux $\Phi$ inside these rings. This is the reason for magnetoconductance oscillations in such systems. We detected…
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…
Metal halide perovskite solar cells have gained widespread attention due to their high efficiency and high defect tolerance. The absorbing perovskite layer is as a mixed electron-ion conductor that supports high rates of ion and charge…
Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process…
Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [$R(T)$] of Au / YBa$_2$Cu$_3$O$_{7-\delta}$ (optimally doped YBCO) interfaces have been studied at different resistance states. This states were…
Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
The anomalous hysteresis is reported in photo current density-voltage (J-V) curves of perovskite solar cells. The origins responsible for hysteresis are primarily attributed to ferroelectricity, trapping/de-trapping, and ions migration.…
The distortion of corner-sharing octahedra in isovalent perovskite transition-metal oxide interfaces is proven to be an excellent way to tailor the electronic and magnetic properties of their heterostructures. Combining depth-dependent…
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum…
Electric polarization and metallicity are long believed not to coexist until the emergence of exceptionally rare material examples including the bulk polar metals and more recently two-dimensional (2D) van der Waals (vdW) materials such as…
We report a detailed magnetotransport study of the highly anisotropic quasi-one-dimensional oxide Li$_{0.9}$Mo$_6$O$_{17}$ whose in-chain electrical resistivity diverges below a temperature $T_{\rm min} \sim$ 25 K. For $T < T_{\rm min}$, a…