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相关论文: The Inductive Single-Electron Transistor (L-SET)

200 篇论文

We have investigated a double-island single-electron transistor (DISET) coupled to a floating metal double-dot (DD). Low-temperature transport measurements were used to map out the charge configurations of both the DISET and the DD. A…

凝聚态物理 · 物理学 2007-05-23 R. Brenner , Andrew D. Greentree , A. R. Hamilton

The composition of dark matter is one of the puzzling topics in astrophysics. To address this issue, several experiments searching for the existence of axions have been designed, built and realized in the last twenty years. Among all the…

仪器与探测器 · 物理学 2021-04-07 Federico Paolucci , Francesco Giazotto

We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…

We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth…

介观与纳米尺度物理 · 物理学 2015-05-13 M. C. Cassidy , A. S. Dzurak , R. G. Clark , K. D. Petersson , I. Farrer , D. A. Ritchie , C. G. Smith

The Superconducting Quasiparticle-Amplifying Transmon (SQUAT) is a new sensor architecture for THz (meV) detection based on a weakly charge-sensitive transmon directly coupled to a transmission line. In such devices, energy depositions…

A non-band theory is developed to describe the superconductor-insulator (SI) transtition in resistively shunted, single Josephson junctions. The $I-V$ characteristic is formulated by a Landauer-like formula and evaluated by the…

介观与纳米尺度物理 · 物理学 2009-11-07 S. G. Chung

We have fabricated and characterized a new type of electrometer that couples two parallel single-electron transistors (SETs) to a radio-frequency tank circuit for use as a differential RF-SET. We demonstrate operation of this device in…

介观与纳米尺度物理 · 物理学 2009-11-11 J. F. Schneiderman , P. Delsing , M. D. Shaw , H. M. Bozler , P. M. Echternach

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…

介观与纳米尺度物理 · 物理学 2011-04-08 Mingyun Yuan , Feng Pan , Zhen Yang , T. J. Gilheart , Fei Chen , D. E. Savage , M. G. Lagally , M. A. Eriksson , A. J. Rimberg

We have directly measured the quantum noise of a superconducting single-electron transistor (S-SET) embedded in a microwave resonator consisting of a superconducting LC tank circuit. Using an effective bath description, we find that the…

介观与纳米尺度物理 · 物理学 2008-05-08 W. W. Xue , Z. Ji , Feng Pan , Joel Stettenheim , A. J. Rimberg

Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required…

Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…

介观与纳米尺度物理 · 物理学 2007-08-01 Vincent I. Conrad , Andrew D. Greentree , Lloyd C. L. Hollenberg

Short dephasing times pose one of the main challenges in realizing a quantum computer. Different approaches have been devised to cure this problem for superconducting qubits, a prime example being the operation of such devices at optimal…

介观与纳米尺度物理 · 物理学 2007-10-14 Jens Koch , Terri M. Yu , Jay Gambetta , A. A. Houck , D. I. Schuster , J. Majer , Alexandre Blais , M. H. Devoret , S. M. Girvin , R. J. Schoelkopf

The future development of quantum information using superconducting circuits requires Josephson qubits with long coherence times combined to a high-delity readout. Major progress in the control of coherence has recently been achieved using…

The ion-sensitive field-effect transistor (ISFET) is an emerging technology that has received much attention in numerous research areas, including biochemistry, medicine, and security applications. However, compared to other types of…

系统与控制 · 电气工程与系统科学 2022-08-10 Elmira Moussavi , Dominik Sisejkovic , Animesh Singh , Daniyar Kizatov , Rainer Leupers , Sven Ingebrandt , Vivek Pachauri , Farhad Merchant

Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency…

介观与纳米尺度物理 · 物理学 2017-05-24 A. Rossi , R. Zhao , A. S. Dzurak , M. F. Gonzalez-Zalba

An analytical expression for the supercurrent of a superconducting single-electron transistor (SSET) is derived. The derivation is based on analogy between the model Hamiltonian for E_J>E_C and a discrete, one-dimensional harmonic…

超导电性 · 物理学 2007-05-23 M. Aunola

We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point…

介观与纳米尺度物理 · 物理学 2015-09-24 J. I. Colless , A. C. Mahoney , J. M. Hornibrook , A. C. Doherty , D. J. Reilly , H. Lu , A. C. Gossard

Josephson junctions (JJs) are ubiquitous superconducting devices, enabling high sensitivity magnetometers and voltage amplifiers, as well as forming the basis of high performance cryogenic computer and superconducting quantum computers.…

We analyze the charge dynamics of a superconducting single-electron transistor (SSET) in the regime where charge transport occurs via Cooper-pair resonances. Using an approximate description of the system Hamiltonian, in terms of a series…

介观与纳米尺度物理 · 物理学 2010-08-26 P. G. Kirton , M. Houzet , F. Pistolesi , A. D. Armour

We report an experimental study of induced superconductivity in Ge hut nanowire Josephson junctions. The Ge hut nanowires are grown on prepatterned SiGe ridges via molecular beam epitaxy (MBE) and Josephson junction devices are fabricated…

介观与纳米尺度物理 · 物理学 2026-01-23 Han Gao , Jian-Huan Wang , Ji-Yin Wang , Jian-Jun Zhang , Hongqi Xu