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We theoretically analyzed the microwave-induced modification of the Hall magnetoresistivity in high mobility two-dimensional electron systems. These systems present diagonal magnetoresistivity oscillations and zero-resistance states when…

介观与纳米尺度物理 · 物理学 2009-11-13 Jesus Inarrea

An experimental study of the high mobility GaAs/AlGaAs system at large-$\nu$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which…

介观与纳米尺度物理 · 物理学 2007-05-23 R. G. Mani , W. B. Johnson , V. Umansky , V. Narayanamurti , K. Ploog

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the…

介观与纳米尺度物理 · 物理学 2009-11-10 R. G. Mani , V. Narayanamurti , K. von Klitzing , J. H. Smet , W. B. Johnson , V. Umansky

We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, $\nu$. At large-$\nu$, the dark study indicates several distinct phase relations ("Type-1",…

介观与纳米尺度物理 · 物理学 2009-06-02 R. G. Mani , W. B. Johnson , V. Umansky , V. Narayanamurti , K. Ploog

We consider the effect of microwave radiation on the Hall resistivity in two-dimension electron systems. It is shown that the photon-assisted impurity scattering of electrons can result in oscillatory dependences of both dissipative and…

介观与纳米尺度物理 · 物理学 2009-11-10 V. Ryzhii

We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, $B$, in the large filling factor limit. Vanishing…

介观与纳米尺度物理 · 物理学 2009-11-10 R. G. Mani

The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic field reversal in the…

介观与纳米尺度物理 · 物理学 2015-03-19 S. Wiedmann , G. M. Gusev , O. E. Raichev , S. Krämer , A. K. Bakarov , J. C. Portal

We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani et al. In our experiments, on a sample with a more moderate…

介观与纳米尺度物理 · 物理学 2009-11-10 S. A. Studenikin , M. Potemski , P. T. Coleridge , A. Sachrajda , Z. R. Wasilewski

The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields $B = [4/(4j+1)] B_{f}$, where $B_{f} =…

介观与纳米尺度物理 · 物理学 2009-11-11 R. G. Mani

The effect of a microwave field in the frequency range from 54 to 140 $\mathrm{GHz}$ on the magnetotransport in a GaAs quantum well with AlAs/GaAs superlattice barriers and with an electron mobility no higher than $10^6$ $\mathrm{cm^2/Vs}$…

介观与纳米尺度物理 · 物理学 2007-05-23 A. A. Bykov , A. K. Bakarov , D. R. Islamov , A. I. Toropov

The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, m$^{*}$ is an effective…

介观与纳米尺度物理 · 物理学 2009-11-11 R. G. Mani

We have studied the effect of an in-plane magnetic field on Hall field-induced resistance oscillations in high mobility two-dimensional electron systems. We have found that the oscillation frequency depends only on the perpendicular…

介观与纳米尺度物理 · 物理学 2015-03-17 A. T. Hatke , M. A. Zudov , L. N. Pfeiffer , K. W. West

We report on theoretical studies of recently discovered microwave-induced resistance oscillations and zero resistance states in Hall bars with two occupied subbands. In the same results, resistance presents a peculiar shape which appears to…

介观与纳米尺度物理 · 物理学 2015-05-30 Jesus Inarrea , Gloria Platero

Quantum anomalous Hall (QAH) insulators exhibit chiral dissipationless edge states without an external magnetic field, making them a promising material for quantum metrology and microwave applications. However, the breakdown of the…

介观与纳米尺度物理 · 物理学 2025-05-30 Torsten Röper , Daniel Rosenbach , Achim Rosch , Alexey A. Taskin , Yoichi Ando , Erwann Bocquillon

We demonstrate a strong correlation between the magnetoresistive and the concurrent microwave reflection from the microwave photo-excited GaAs/AlGaAs two-dimensional electron system (2DES). These correlations are followed as a function of…

介观与纳米尺度物理 · 物理学 2013-11-14 Tianyu Ye , Ramesh Mani , Werner Wegscheider

The electronic circulator, and its close relative the gyrator, are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies.…

介观与纳米尺度物理 · 物理学 2014-05-06 Giovanni Viola , David P. DiVincenzo

Recent measurements of a 2D electron gas subjected to microwave radiation reveal a magnetoresistance with an oscillatory dependence on the ratio of radiation frequency to cyclotron frequency. We perform a diagrammatic calculation and find…

介观与纳米尺度物理 · 物理学 2009-11-10 Adam C. Durst , Subir Sachdev , N. Read , S. M. Girvin

We report on a theoretical insight about the microwave-induced resistance oscillations and zero resistance states when dealing with p-type semiconductors and holes instead of electrons. We consider a high-mobility two-dimensional hole gas…

介观与纳米尺度物理 · 物理学 2015-10-28 Jesús Iñarrea , Gloria Platero

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in…

介观与纳米尺度物理 · 物理学 2017-09-01 X. Fu , Q. A. Ebner , Q. Shi , M. A. Zudov , Q. Qian , M. J. Manfra

We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations.…

介观与纳米尺度物理 · 物理学 2009-11-07 E. Peled , D. Shahar , Y. Chen , D. L. Sivco , A. Y. Cho
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