相关论文: Switching Current vs. Magnetoresistance in Magneti…

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…

Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…

Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…

DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…

Magnetization behavior of long nanowires with square cross-section under influence of strong perpendicular spin-polarized current is studied theoretically. The study is based on Landau-Lifshitz-Slonczewski phenomenology. In the no current…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

We demonstrate a possibility to manipulate the magnetic coupling between two nanomagnets with a help of ac electric field. In the scheme suggested the magnetic coupling in question is mediated by a magnetic particle contacting with both of…

The dynamics of the magnetization of the free layer in a spin-torque nano oscillator (STNO) influenced by a noncollinear alignment between the magnetizations of the free and pinned layers due to an interlayer exchange coupling has been…

We show that a Josephson current flowing through a ferromagnet-normal-metal-ferromagnet trilayer connected to two superconducting electrodes induces an equilibrium exchange interaction between the magnetic moments of the ferromagnetic…

The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization…

The ability to control the magnetization switching in nanoscale devices is a crucial step for the development of fast and reliable techniques to store and process information. Here we show that the switching dynamics can be controlled…

It is shown that a pulsed current driven through Ni nanowires provokes an irreversible magnetization reversal at a field distant from the spontaneous switching field $H_{sw}$ by $\Delta H$ of as much as 40 % of $H_{sw}$. The state of the…

Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…

The hysteresis curves of multilayer microwires consisting of a soft magnetic nucleus, intermediate non-magnetic layers, and an external hard magnetic layer are investigated. The magnetostatic interaction between magnetic layers is proved to…

Measurements of magnetic hysteresis loops in single Co nanoparticles at dilution refrigerator temperatures are presented. The nanoparticles are in electric contact with bulk Al leads via tunnel junctions. The tunnel current versus magnetic…

In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a…

The use of moir\'e patterns to manipulate two-dimensional materials has facilitated new possibilities for controlling material properties. The moir\'e patterns in the two-dimensional magnets can cause peculiar spin texture, as shown by…

We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched…

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…

Current-induced magnetic switching of a single magnetic molecule attached to two ferromagnetic contacts is considered theoretically, with the main emphasis put on the role of intrinsic spin relaxation processes. It is shown that…