相关论文: Switching Current vs. Magnetoresistance in Magneti…
Recent experiments have revealed nonlinear features of the magnetoresistance in metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal (FM). A small change in the lon- gitudinal resistance of the bilayer has been…
We examine transport properties of a magnetic superlattice with current perpendicular to the planes. In the limit that the phase-breaking and spin flip scattering lengths are greater than the system size, a multiple-scattering approach is…
We have performed non-local spin injection into a nano-scale ferromagnetic particle configured in a lateral spin valve structure to switch its magnetization only by spin current. The non-local spin injection aligns the magnetization of the…
We examine the effect a spatially non-uniform spin current with a component polarized partially out of the plane has on a low saturation magnetization nanomagnet free layer. Micromagnetic simulations indicate that the spin torque efficiency…
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied…
Using thin film pillars ~100 nm in diameter, containing two ferromagnetic Co layers of different thicknesses separated by a paramagnetic Cu spacer, we examine effects of torques due to spin-polarized currents flowing perpendicular to the…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
Magnetization switching in a fine-structured ferromagnet of nanoscale by the spin-transfer torque excited via the spin Hall effect has attracted much attention because it enables us to manipulate the magnetization without directly applying…
The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching…
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of…
Depinning of nanoscale magnetic textures, such as domain walls, vortices and skyrmions, is of paramount importance for magnetic storage and information processing. We measure time-resolved magnetic switching statistics of an individual,…
A detailed numerical analysis of the magnetization reversal processes in multisegmented nanowire arrays was developed. The nanowires have a long aspect ratio and are formed by magnetic and non-magnetic sections alternately arranged in such…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…