相关论文: Switching Current vs. Magnetoresistance in Magneti…
We present systematic magnetoelectronic measurements of magnetic nanopillars with different structures of polarizing magnetic layers. The magnetic reversal at small magnetic field, the onset of magnetic dynamics at larger field, and the…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…
Spin transfer in asymmetric Co/Cu/Co bilayer magnetic nanopillars junctions has been studied at low temperature as a function of free-layer thickness. The phase diagram for current-induced magnetic excitations has been determined for…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
We consider a quasi one-dimensional configuration consisting of two small pieces of ferromagnetic material separated by a metallic one and contacted by two metallic leads. A spin-polarized current is injected from one lead. Our goal is to…
We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via…
We measure the temperature, magnetic-field, and current dependence for the switching of nanomagnets by a spin-polarized current. Depending on current bias, switching can occur between either two static magnetic states or a static state and…
We provide evidence for the effects of spin polarized current on a nanofabricated antiferromagnet incorporated into a spin-valve structure. Signatures of current-induced effects include bipolar steps in differential resistance,…
We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr2O3/Co/Pt trilayers as model system, in which…
Magnetization reversal in magnetic particles is one of the fundamental issues in magnetic data storage. Technological improvements require the understanding of dynamical magnetization reversal processes at nanosecond time scales. New…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
We propose a theoretical model of magnetization switching in a ferromagnetic multilayer by both electric current and microwaves. The electric current gives a spin transfer torque on the magnetization, while the microwaves induce a…
Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…
We observe magnetization dynamics induced by spin momentum transfer in the noise spectra of current perpendicular to the plane giant magnetoresistance spin valves. The dynamics are observable only for those combinations of current direction…
Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by…