相关论文: Modeling and simulation of polycrystalline ZnO thi…

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…

High throughput experimental methods are known to accelerate the rate of research, development, and deployment of electronic materials. For example, thin films with lateral gradients in composition, thickness, or other parameters have been…

Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide…

In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers…

An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc…

We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the…

Charge-carrier transport at the semiconductor-gate dielectric interface in organic field-effect transistors is critically dependent on the degree of disorder in the typically semi-crystalline semiconductor layer. Charge trapping can occur…

A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness…

Non-crystalline thin-film Schottky diodes are cost-effective but often exhibit unreliable electrical characteristics due to material imperfections. In this work, I present a Schottky diode structure utilizing in-situ grown Ta2O5 and ZnO…

The development of thin film transistor (TFTs) based integrated circuits on flexible substrates promise interesting approaches to human interface systems. Recently TFTs have been fabricated on textured surfaces such as textiles, paper,…

Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) are one of the most promising alternatives among the microwave spintronics devices. They can provide highly coherent and widely tuneable microwave signals and can be fabricated at low…

Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like glucose oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment…

Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal…

Nanocrystalline silicon and silicon-germanium alloys are promising thermoelectric materials that have achieved substantially improved figure of merits compared to their bulk counterparts. This enhancement is typically attributed to a…

We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along…

Modulation of the grain boundary properties in thermoelectric materials that have thermally activated electrical conductivity is crucial in order to achieve high performance at low temperatures. In this work, we show directly that the…

Transparent amorphous oxide semiconductors (TAOSs) based transparent thin-film transistors (TTFTs) with high field effect mobility are essential for developing advanced flat panel displays. Among TAOSs, amorphous (a-) SnO$_2$ has several…

We present here a detailed numerical study of the dynamical behaviour of `soft' uncompressed grains in a granular chain where the grains interact via the intrinsically nonlinear Hertz force. It is well known that such a chain supports the…

We address the problem of quantum transport in a nanometre sized two-terminal ZnO device subject to an external strain. The two junctions formed between the electrodes and the ZnO are generally taken as Ohmic and Schottky type,…

We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show…