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相关论文: Phase diagram of the frustrated Hubbard model

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While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

We investigate the phase diagram of the square lattice bilayer Hubbard model at half filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of interlayer hopping t_perp and on-site…

强关联电子 · 物理学 2014-03-11 Robert Rüger , Luca F. Tocchio , Roser Valentí , Claudius Gros

The mass-imbalanced Hubbard model represents a continuous evolution from the Hubbard to the Falicov-Kimball model. We employ dynamical mean field theory and study the paramagnetic metal-insulator transition, which has a very different…

强关联电子 · 物理学 2017-06-29 Marie-Therese Philipp , Markus Wallerberger , Patrik Gunacker , Karsten Held

We investigate the phase diagram of a two-band frustrated Hubbard model in the framework of dynamical mean field theory. While a first-order phase transition occurs from a paramagnetic (PM) metal to an antiferromagnetic (AF) insulator when…

超导电性 · 物理学 2015-05-14 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

The existence of a novel metal-insulator transition in the ferromagnetic state of models for undoped manganites is here discussed using numerical techniques applied to the $e_{\rm g}$-orbital degenerate Hubbard model tightly coupled with…

强关联电子 · 物理学 2009-11-07 Takashi Hotta

We have investigated the antiferromagnetic phase of the 2D, the 3D and the extended Hubbard models on a bipartite cubic lattice by means of the Composite Operator Method within a two-pole approximation. This approach yields a fully…

强关联电子 · 物理学 2009-09-25 Adolfo Avella , Ferdinando Mancini , Roland Muenzner

We determine the electronic structure and phase stability of paramagnetic V$_2$O$_3$ at the Mott-Hubbard metal-insulator phase transition, by employing a combination of an ab initio method for calculating band structures with dynamical…

强关联电子 · 物理学 2015-06-11 I. Leonov , V. I. Anisimov , D. Vollhardt

We study phase diagrams of the Hubbard model on anisotropic triangular lattices, which also represents a model for $\kappa$-type BEDT-TTF compounds. In contrast with mean-field predictions, path-integral renormalization group calculations…

强关联电子 · 物理学 2007-05-23 Hidekazu Morita , Shinji Watanabe , Masatoshi Imada

We investigate the ground-state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix…

强关联电子 · 物理学 2009-11-10 A. P. Kampf , M. Sekania , G. I. Japaridze , Ph. Brune

We investigate the paramagnetic-metal-to-antiferromagnetic-metal and antiferromagnetic-metal-to- antiferromagnetic-insulator transitions using a slave-boson mean-field theory. To this effect, we discuss the ground state of the half-filled…

强关联电子 · 物理学 2009-10-31 Imseok Yang , Ekkehard Lange , Gabriel Kotliar

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

The isostructural metal-insulator transition in Cr-doped V2O3 is the textbook example of a Mott-Hubbard transition between a paramagnetic metal and a paramagnetic insulator. We review recent theoretical calculations as well as experimental…

强关联电子 · 物理学 2013-03-11 P. Hansmann , A. Toschi , G. Sangiovanni , T. Saha-Dasgupta , S. Lupi , M. Marsi , K. Held

The magnetic properties and Mott transition of the half-filled Hubbard model on the 1/5 depleted square lattice with frustration is studied at zero temperature by the variational cluster approximation. The $(\pi,\pi)$ N\'eel ordering (AF)…

强关联电子 · 物理学 2015-06-22 Atsushi Yamada

The Hubbard model on the honeycomb lattice undergoes a quantum phase transition from a semimetallic to a Mott insulating phase and from a disordered to an anti-ferromagnetically phase. We show that these transitions occur simultaneously and…

强关联电子 · 物理学 2022-07-26 Johann Ostmeyer , Evan Berkowitz , Stefan Krieg , Timo A. Lähde , Thomas Luu , Carsten Urbach

The metal--insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the $t-t'$ Hubbard model at half-filling by using both the Hartree-Fock approximation (HFA) generalized for the case…

强关联电子 · 物理学 2016-11-03 M. A. Timirgazin , P. A. Igoshev , A. K. Arzhnikov , V. Yu. Irkhin

The variational cluster approximation is used to study the frustrated Hubbard model at half filling defined on the two-dimensional square lattice with anisotropic next-nearest-neighbor hopping parameters. We calculate the ground-state phase…

强关联电子 · 物理学 2017-02-02 Kazuma Misumi , Tatsuya Kaneko , Yukinori Ohta

We study the one-band Hubbard model at half filling with hopping asymmetry and its effective model at finite but large U up to the second order of tmix/U. Two variational wave functions, the resonating valence bond (RVB) wave function and…

强关联电子 · 物理学 2007-05-23 Yuchuan Wen , Yue Yu
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