中文
相关论文

相关论文: Mott transition in multi-orbital systems

200 篇论文

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

We study the origin of the temperature-induced Mott transition in Ca2RuO4. As a method we use the local-density approximation+dynamical mean-field theory. We show the following. (i) The Mott transition is driven by the change in structure…

强关联电子 · 物理学 2011-06-14 E. Gorelov , M. Karolak , T. O. Wehling , F. Lechermann , A. I. Lichtenstein , E. Pavarini

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…

强关联电子 · 物理学 2009-11-11 M. S. Laad , L. Craco , E. Müller-Hartmann

We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…

强关联电子 · 物理学 2021-02-19 Gia-Wei Chern

Within the framework of a realistic multi-band p-d-model, we derived an effective Hamiltonian to describe the exchange interaction effects near the spin crossover in magnetic Mott-Hubbard insulators under pressure. It is shown that…

强关联电子 · 物理学 2017-10-18 Alexander I. Nesterov , Yuri S. Orlov , Sergey G. Ovchinnikov , Sergey V. Nikolaev

Mott metal-insulator transitions in an M-fold orbitally degenerate Hubbard model are studied by means of a generalization of the linearized dynamical mean-field theory. The method allows for an efficient and reliable determination of the…

强关联电子 · 物理学 2009-11-07 Y. Ono , M. Potthoff , R. Bulla

We study by dynamical mean field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band…

强关联电子 · 物理学 2018-07-11 Francesco Grandi , Adriano Amaricci , Massimo Capone , Michele Fabrizio

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

We study the non-degenerate one dimensional two-orbital Hubbard model with interorbital Coulomb interaction. By means of the density-matrix renormalization group technique, we calculate the local single-particle density of states and the…

强关联电子 · 物理学 2024-10-14 N. Aucar Boidi , A. P. Kampf , K. Hallberg

A major challenge in condensed matter physics is integrating topological phenomena with correlated electron physics to leverage both types of states for next-generation quantum devices. Metal-insulator transitions (MITs) are central to…

Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their…

强关联电子 · 物理学 2009-11-10 I. B. Altfeder , X. Liang , D. M. Chen , V. Narayanamurti

The role of orbital ordering on metal-insulator transition of transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap on the orbital…

强关联电子 · 物理学 2007-09-25 Dong-Meng Chen , Liang-Jian Zou

Achieving the full understanding and control of the insulator-to-metal transition in Mott materials is key for the next generation of electronics devices, with applications ranging from ultrafast transistors, volatile and non-volatile…

强关联电子 · 物理学 2024-10-02 Alessandra Milloch , Michele Fabrizio , Claudio Giannetti

In correlated electron systems the metallic character of a material can be strongly suppressed near an integer concentration of conduction electrons as Coulomb interactions forbid the double occupancy of local atomic orbitals. While the…

强关联电子 · 物理学 2021-05-19 Katherine Driscoll , Arnaud Ralko , Simone Fratini

A slave boson representation for the degenerate Hubbard model is introduced. The location of the metal to insulator transition that occurs at commensurate densities is shown to depend weakly on the band degeneracy M. The relative weights of…

强关联电子 · 物理学 2016-08-31 Raymond Fresard , Gabriel Kotliar

The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…

The metal-insulator transition (MIT) is a fundamental phenomenon in condensed matter physics and a hallmark of strong electronic correlations. Hydrogen-based systems offer a simple yet powerful model for investigating the MIT, as their…

强关联电子 · 物理学 2025-05-26 Juan Felipe Huan Lew-Yee , Mario Piris

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

The metal-insulator and spin state transitions of CoO under high pressure are studied by using density functional theory combined with dynamical mean-field theory. Our calculations predict that the metal-insulator transition in CoO is a…

强关联电子 · 物理学 2014-12-04 Li Huang , Yilin Wang , Xi Dai

The orbital-selective electronic behavior is one of the most remarkable manifestations of strong electronic correlations in multi-orbital systems. A prominent example is the orbital-selective Mott transition (OSMT), which is characterized…

强关联电子 · 物理学 2022-08-30 Evgeny A. Stepanov