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相关论文: Mott transition in multi-orbital systems

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The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…

强关联电子 · 物理学 2009-11-10 Thomas Pruschke , Ralf Bulla

We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott…

The underlying mechanism of the metal-to-insulator transition (MIT) in BaVS$_3$ is investigated, using dynamical mean-field theory in combination with density functional theory. It is shown that correlation effects are responsible for a…

强关联电子 · 物理学 2009-11-10 Frank Lechermann , Silke Biermann , Antoine Georges

Recent investigations suggest that both spin-orbit coupling and electron correlation play very crucial roles in the $5d$ transition metal oxides. By using the generalized Gutzwiller variational method and dynamical mean-field theory with…

强关联电子 · 物理学 2015-06-12 Liang Du , Li Huang , Xi Dai

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing…

强关联电子 · 物理学 2014-10-22 Yukiko Omori , Andreas Rüegg , Manfred Sigrist

Light-manipulation of correlated electronic phases in solids offers the tantalizing prospect of realizing electronic devices operating at the ultrafast time-scale. In this context, the experimental realization of non-equilibrium transitions…

强关联电子 · 物理学 2021-04-09 Francesco Grandi , Martin Eckstein

The influence of Coulomb interaction on transport properties of spinless electrons in small disordered two dimensional systems is studied within a tight binding model. Spatial correlations, inverse participation ratio, and multifractal…

介观与纳米尺度物理 · 物理学 2009-10-31 Richard Berkovits , Jan W. Kantelhardt , Yshai Avishai , Shlomo Havlin , Armin Bunde

We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an…

强关联电子 · 物理学 2009-11-11 Yun Song , Liang-Jian Zou

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and…

强关联电子 · 物理学 2015-06-22 A. Camjayi , C. Acha , R. Weht , M. G. Rodríguez , B. Corraze , E. Janod , L. Cario , M. J. Rozenberg

An instability of the quasi-1D Luttinger liquid associated with the metal - insulator transition is considered. The homogeneous metal ground state of this liquid is demonstrated to be unstable and the charge-density wave arises in the…

强关联电子 · 物理学 2009-10-31 V. S. Babichenko

Mott-Hubbard and Hund electron correlations have been realized thus far in separate classes of materials. Here, we show that a single moir\'e homobilayer encompasses both kinds of physics in a controllable manner. We develop a microscopic…

强关联电子 · 物理学 2023-01-26 Siheon Ryee , Tim O. Wehling

We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of…

强关联电子 · 物理学 2021-01-29 Louk Rademaker , Valerii V. Vinokur , Alexey Galda

Metal to insulator transitions (MITs) driven by strong electronic correlations are common in condensed matter systems, and are associated with some of the most remarkable collective phenomena in solids, including superconductivity and…

强关联电子 · 物理学 2019-12-20 G. G. Guzmán-Verri , R. T. Brierley , P. B. Littlewood

We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…

强关联电子 · 物理学 2023-11-21 Mathias Pelz , Severino Adler , Matthias Reitner , Alessandro Toschi

We analyze an interplay between Coulomb blockade and quantum fluctuations in a coherent conductor (with dimensionless conductance $g \gtrsim 1$) attached to an Ohmic shunt. We demonstrate that at T=0 the system can be either an insulator or…

介观与纳米尺度物理 · 物理学 2009-11-07 Dmitri S. Golubev , Andrei D. Zaikin

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

Achieving fundamental understanding of insulator-to-metal transitions (IMTs) in strongly correlated systems and their persistent and reversible control via nonequilibrium drive are prime targets of current condensed matter research.…

We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {\it non-magnetic} variational wave functions,…

强关联电子 · 物理学 2016-02-18 Luca F. Tocchio , Federico Arrigoni , Sandro Sorella , Federico Becca

We study localization phenomena in two dimensional systems of charged particles in the presence of a metallic ground plane with a particular focus on the superconductor-insulator transition. The ground plane introduces a screening of the…

强关联电子 · 物理学 2007-05-23 Ashvin Vishwanath , Joel E. Moore , T. Senthil