相关论文: Localization effects and inelastic scattering in d…
In the context of an isolated three-dimensional noninteracting fermionic lattice system, we study the effects of a sudden quantum quench between a disorder-free situation and one in which disorder results in a mobility edge and associated…
Strongly correlated electrons with box disorder in high-dimensional lattices are investigated. We apply the statistical dynamical mean-field theory, which treats local correlations non-perturbatively. The incorporation of a finite lattice…
The venerable phenomena of Anderson localization, along with the much more recent many-body localization, both depend crucially on the presence of disorder. The latter enters either in the form of quenched disorder in the parameters of the…
The emergence of glassy behavior of electrons is investigated for systems close to the disorder and/or interaction-driven metal-insulator transitions. Our results indicate that Anderson localization effects strongly stabilize such glassy…
I discuss the properties of electron states in amorphous Si based on large scale calculations with realistic several thousand atom models. A relatively simple model for the localized to extended (Anderson) transition is reviewed. Then, the…
The interplay of disorder and interactions is a subject of perennial interest. In this work, we have investigated the effect of disorder due to chemical substitution on the dynamics and transport properties of correlated Fermi liquids. A…
We discuss conditions to be put on mean-field-like theories to be able to describe fundamental physical phenomena in disordered electron systems. In particular, we investigate options for a consistent mean-field theory of electron…
The magnetic ground state phase diagram of the disordered Hubbard model at half-filling is computed in dynamical mean-field theory supplemented with the spin resolved, typical local density of states. The competition between many-body…
We show that in presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition (MIT) is fundamentally changed with respect to the non-interacting (Anderson) scenario. For strong disorder, even a…
Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than…
Anderson localization is a quantum phenomenon in which disorder localizes electronic wavefunctions. In this work, we propose a new approach to study Anderson localization based on the density matrix formalism. Drawing an analogy to the…
We examine the onset of Anderson localization in three-dimensional systems with structural disorder in the form of lattice irregularities and in the absence of any on-site disordered potential. Analyzing two models with distinct types of…
Quenched disorder in a solid state system can result in Anderson localization, where electrons are exponentially localized and the system behaves like an insulator. By solving exactly a disordered electronic lattice model out of…
We obtain the conditions necessary for the emergence of various low temperature ordered states (local moment antiferromagnetism, unconventional superconductivity, quantum criticality, and Landau Fermi liquid behavior) in Kondo lattice…
Wave localization is ubiquitous in disordered media -- from amorphous materials, where soft-mode localization is closely related to materials failure, to semi-conductors, where Anderson localization leads to metal-insulator transition. Our…
In a disordered environment, the probability of transmission of a wave reduces with increasing disorder, the ultimate limit of which is the near-zero transmission due to Anderson localization. Under localizing conditions, transport is…
We generalize the Fredrickson-Helfand theory of the microphase separation in symmetric diblock copolymer melts by taking into account the influence of a time-independent homogeneous electric field on the composition fluctuations within the…
We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance…
We develop a theory of the local density of states (LDOS) of disordered superconductors, employing the non-linear sigma-model formalism and the renormalization-group framework. The theory takes into account the interplay of disorder and…
We study a Lindbladian generalization of the Anderson model of localization that describes disordered free fermions coupled to a disordered environment. From finite size scaling of both eigenvalue statistics and participation ratio, we…