相关论文: Long-range potential fluctuations and 1/f noise in…
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic…
We present measurements of 1/f resistance noise in three different films of amorphous silicon (a-Si) in the presense of a transverse electric current. Two of these films have n-i-n sandwich structure - in one of them all three layers were…
At low temperatures electron hopping in a three dimensional Coulomb glass produces fluctuations in the single particle density of states and hence in the resistivity. This results in a low frequency resisitivity noise spectrum which goes as…
This report is aimed at reviving the explanation of flicker-noise observations as the result of spectral measurement of very low-frequency but stationary narrow-band fluctuations named as infralow-frequency noise (ILF noise) [A. Ya.…
The accurate analytical solution for the low temperature $1/f$ noise in a microwave dielectric constant of amorphous films containing tunneling two-level systems (TLSs) is derived within the standard tunneling model including the weak…
We have measured the low-frequency resistance fluctuations (1 mHz<f<10 Hz) in Ag nanowires of diameter 15 nm<d<200 nm at room temperatures. The power spectral density (PSD) of the fluctuations has a 1/f^{\alpha} character as seen in…
An oscillatory magnetic field dependence of the DC voltage is observed when a low-frequency current flows through superconducting Sn-Ge thin-film composites near the percolation threshold. The paper also studies the experimental…
Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition.…
We show that 1/f noise is produced in a 3D electron glass by charge fluctuations due to electrons hopping between isolated sites and a percolating network at low temperatures. The low frequency noise spectrum goes as \omega^{-\alpha} with…
Flicker (1/f^gamma) voltage noise spectrum is derived from finite-temperature quantum electromagnetic fluctuations produced by elementary charge carriers in external electric field. It is suggested that deviations of the frequency exponent…
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms,…
The power spectrum of quantum fluctuations of the electromagnetic field produced by an elementary particle is determined. It is found that in a wide range of practically important frequencies the power spectrum of fluctuations exhibits an…
We show that $1/f$-noise in the variable range hopping regime is related to transitions of many-electrons clusters (fluctuators) between two almost degenerate states. Giant fluctuation times necessary for $1/f$-noise are provided by slow…
An approach to the problem of 1/f voltage noise observed in all conducting media is developed based on an uncertainty relation for the Fourier-transformed signal. It is shown that the quantum indeterminacy caused by non-commutativity of…
Low-frequency noise with the spectral density S(f)~1/f^g (f is the frequency and g~1) is a ubiquitous phenomenon, which hampers operation of many devices and circuits. A long-standing question of particular importance for electronics is…
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral…
Fluctuations of the electromagnetic field produced by quantized matter in external electric field are investigated. A general expression for the power spectrum of fluctuations is derived within the long-range expansion. It is found that in…
Cobalt disilicide provides a promising nearly-epitaxial superconducting material on silicon, which is compatible with high-density integrated circuit technology. We have characterized CoSi$_{2}$ superconducting microwave cavities around 5.5…
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide…
We present and analyze the simple analytically solvable model of 1/f noise, which can be relevant for the understanding of the origin, main properties and parameter dependencies of the flicker noise. In the model, the currents or signals…