相关论文: High-performance planar light-emitting diode
Colloidal quantum dots (QDs) are promising emitters for electroluminescence devices (QD light-emitting-diodes, QLEDs). Though QDs have been synthesized with efficient and stable photoluminescence, inheriting their superior luminescence in…
We report on performance results achieved for recently produced LAPPDs - largest comercially available planar geometry photodetectors based on microchannel plates. These results include electron gains of up to $10^{7}$, low dark noise rates…
The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a…
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer…
We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results…
It is widely believed that the generation of high speed optical signals is not the job for an LED. However this work is done to show that there are techniques which can be used to produce nanosecond square pulses from a diode. Rise and fall…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
A stable reference light source based on an LED (Light Emission Diode) is presented for stabilizing the conversion gain of the opto-electronic system of a gamma- and fast-neutron radiographic and tomographic imaging device. A constant…
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown…
Efficient generation of radiation in the mid- and far- infrared relies primarily on lasers and coherent nonlinear optical phenomena driven by lasers. This wavelength range lacks of luminescent devices because the spontaneous emission rate…
We present Haptic Light-Emitting Diodes (HLEDs), luminous thermopneumatic actuators that directly convert pulsed light into mechanical forces and displacements. Each device packages a miniature surface-mount LED in a gas-filled cavity that…
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…
In this work, we present a highly efficient quantitative phase imaging (QPI) approach using programmable annular LED illumination based on traditional bright-field microscope. As a new type of coded illumination, the LED array provides a…
Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface…
A three-dimensional ordered and self-organized semiconductor system emitting highly-polarized light in the yellow-orange visible range (580-650 nm) is presented, comprising self-assembled in-plane AlInP wires vertically stacked in…
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR…
We investigate photoluminescence from a high-density electron-hole plasma in semiconductor quantum wells created via intense femtosecond excitation in a strong perpendicular magnetic field, a fully-quantized and tunable system. At a…
Ultraviolet (UV) light emission at 229 nm wavelength from diode structures based on AlN/Al0.77Ga0.23N quantum wells and using p-type Si to significantly increase hole injection was reported. Both electrical and optical characteristics were…
Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a…
In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting…