相关论文: Spin injection in the non-linear regime: band bend…

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…

The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…

We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…

For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in…

We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or…

In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…

The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…

The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…

Recent experimental work has demonstrated optical control of spin wave emission by tuning the shape of the optical pulse (Satoh et al.\ Nature Photonics, 6, 662 (2012)). We reproduce these results and extend the scope of the control by…

We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…

The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…

We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a…

Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current…

The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…