相关论文: Analysis of integrated single-electron memory oper…
Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction…
Single-electron effects have been widely investigated as a typical physical phenomenon in nanoelectronics. The single-electron effect caused by trap sites has been observed in many devices. In general, traps are randomly distributed and not…
Spin dependent single electron tunneling in a ferromagnetic double junction is investigated theoretically in the limit of incoherent sequential tunneling. The junction consists of a small nonmagnetic metallic grain with discrete energy…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in…
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…
Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold…
Ferroelectric memories have attracted significant interest due to their non-volatile storage, energy efficiency, and fast operation, making them prime candidates for future memory technologies. As commercial Dynamic Random Access Memory…
Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…
Background charge fluctuators are studied individually by means of a modified single-electron pump. Operation of the device in a feedback mode allows electrometric sensing of the charged background and its behavior upon electric potential…
Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…
Single-electron transistors embedded in a vibrating nanoresonator such as a doubly-clamped carbon nanotube exhibit effects stemming from the coupling between electronic and vibrational degrees of freedom. In particular, a capacitive…
We consider electrical transport through single molecules coupled to metal electrodes via tunneling barriers. Approximating the molecule by the Anderson impurity model as the simplest model which includes Coulomb charging effects, we extend…
Charging a nano-scale oscillator by single electron tunneling leads to an effective double-well potential due to image charges. We combine exact numerical diagonalizations with generalized Master equations and show that the resulting…
In this paper, a novel neural network architecture is proposed to address the challenges in energy disaggregation algorithms. These challenges include the limited availability of data and the complexity of disaggregating a large number of…
We analyze the full counting statistics (FCS) of a single-site quantum dot coupled to multiple metallic electrodes in the normal state and a superconductor for arbitrary transmission. We present an analytical solution of the problem taking…
A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…
Metallic structures interacting with electromagnetic fields are known to exhibit properties similar to those found in atoms and molecules, such as multi-photon and tunnel ionization. Developing this similarity beyond the electron emission…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…