相关论文: Analysis of integrated single-electron memory oper…

We put forward a new proposal of designing charge-based logic devices considering a cyclic molecule that can be programmed and re-programmed for different functional logical operations and suitably engineered for data storage as well. The…

Information engines produce mechanical work through measurement and adaptive control. For information engines, the principal challenge lies in how to store the generated work for subsequent utilization. Here, we report an experimental…

This study addresses the challenge of predicting electric vehicle (EV) charging profiles in urban locations with limited data. Utilizing a neural network architecture, we aim to uncover latent charging profiles influenced by spatio-temporal…

For decades, conventional computers based on the von Neumann architecture have performed computation by repeatedly transferring data between their processing and their memory units, which are physically separated. As computation becomes…

The generalized self-consistent field method is used to describe intraband relaxation processes in a general multiband electronic system with presumably weak residual electron-electron interactions. The resulting memory-function…

The performance of superconducting quantum circuits for quantum computing has advanced tremendously in recent decades; however, a comprehensive understanding of relaxation mechanisms does not yet exist. In this work, we utilize a multimode…

Thermoelectric effects are envisioned to reduce programming currents in nanopillar phase change memory cells. However, due to the inherent symmetry in such a structure, the contribution due to thermoelectric effects on programming currents…

The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability.…

Neural Turing Machines (NTM) contain memory component that simulates "working memory" in the brain to store and retrieve information to ease simple algorithms learning. So far, only linearly organized memory is proposed, and during…

Quantum repeaters promise to deliver long-distance entanglement overcoming noise and loss in realistic quantum channels. A promising class of repeaters, based on atomic ensemble quantum memories and linear optics, follow the proposal by…

Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive applications, and SRAM technology scaling and leakage power limits the efficiency of embedded memories. Future on-chip storage will need higher density…

We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the…

We report on the fabrication and transport characterization of atomically-precise single molecule devices consisting of a magnetic porphyrin covalently wired by graphene nanoribbon electrodes. The tip of a scanning tunneling microscope was…

Understanding charging mechanisms and charge retention dynamics of nanocrystal memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium nanocrystals embedded in a silicon oxide matrix…

In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel…

Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…

In this article, we report a theoretical analysis of a nanoelectromechanical shuttle based on a multiscale model that combines microscopic electronic structure data with macroscopic dynamics. The microscopic part utilizes a (static) density…

With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From…

We model a Superconducting Single-Electron Transistor operating by repulsive interactions. The device consists of a ring of Hubbard clusters, placed between electrodes and capacitively coupled to a gate potential. In each cluster, a pair of…

Relying on the redefined vacuum state approach, and based on one-particle three-loop Feynman diagrams, partial third-order interelectronic corrections to the valence electron energy shift are investigated in Li-like ions. The idea is to…