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相关论文: One-Parameter Scaling of the Conductivity of Si:B:…

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Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of…

强关联电子 · 物理学 2009-10-31 s. Bogdanovich , D. Simonian , S. V. Kravchenko , M. P. Sarachik , R. N. Bhatt

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the…

强关联电子 · 物理学 2009-10-31 S. Bogdanovich , M. P. Sarachik , R. N. Bhatt

We present novel infrared optical conductivity data on the three layer high Tc superconductor Bi2Sr2Ca2Cu3O10 at optimal doping. We extend the analysis of an earlier publication, providing a universal scaling function…

强关联电子 · 物理学 2011-05-27 D. van der Marel , F. Carbone , A. B. Kuzmenko , E. Giannini

The temperature dependence of the electrical resistivity in insulator systems with a Coulomb gap in the density of states is expressed by a very simple function which coincides with the Efros-Shklovskii T^(-1/2)result, at temperatures lower…

材料科学 · 物理学 2010-06-15 J. F. Sampaio , A. Aparecido-Ferreira

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…

无序系统与神经网络 · 物理学 2008-03-03 Elvira Ritz , Martin Dressel

For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…

强关联电子 · 物理学 2009-10-31 S. A. Vitkalov , Hairong Zheng , K. M. Mertes , M. P. Sarachik , T. M. Klapwijk

The universal curve for the crossover from ES to screened Mott hopping is used to explain a reported discrepancy between the hopping conductivity prefactors in the two regimes. The prefactor in the screened Mott hopping regime is shown to…

强关联电子 · 物理学 2012-01-25 A. J. Dahm

We have conducted temperature and frequency dependent transport measurements in amorphous Nb_x Si_{1-x} samples in the insulating regime. We find a temperature dependent dc conductivity consistent with variable range hopping in a Coulomb…

强关联电子 · 物理学 2009-11-07 Erik Helgren , George Grüner , Martin Ciofalo , David V. Baxter , John P. Carini

We explore the scaling description for a two-dimensional metal-insulator transition (MIT) of electrons in silicon. Near the MIT, $\beta_{T}/p = (-1/p)d(\ln g)/d(\ln T)$ is universal (with $p$, a sample dependent exponent, determined…

介观与纳米尺度物理 · 物理学 2009-09-25 Nam-Jung Kim , Dragana Popovic , S. Washburn

We report a detailed study of the transport coefficients of $\beta$-Bi$_4$I$_4$ quasi-one dimensional topological insulator. Electrical resistivity, thermoelectric power, thermal conductivity and Hall coefficient measurements are consistent…

强关联电子 · 物理学 2017-07-05 A. Pisoni , R. Gaal , A. Zeugner , V. Falkowski , A. Isaeva , H. Huppertz , G. Autes , O. V. Yazyev , L. Forro

We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures…

强关联电子 · 物理学 2017-09-08 Marianna Batkova , Ivan Batko , Slavomir Gabani , Emil Gazo , Elena Konovalova , Vladimir Filippov

We have measured the temperature dependence of the conductivity $\sigma_{xx}$ of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hopping theory we are able to…

介观与纳米尺度物理 · 物理学 2009-11-07 F. Hohls , U. Zeitler , R. J. Haug

The temperature and electrical field dependent conductivity of n-type CdSe nanocrystal thin films is investigated. In the low electrical field regime, the conductivity follows G ~ exp(-(T*/T)^0.5) in the temperature range 10K<T<120K. At…

材料科学 · 物理学 2009-11-10 Dong Yu , Congjun Wang , Brian L. Wehrenberg , Philippe Guyot-Sionnest

We report an universal behaviour of hopping transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the…

介观与纳米尺度物理 · 物理学 2009-11-13 Matthias Baenninger , Arindam Ghosh , Michael Pepper , Harvey E. Beere , Ian Farrer , Paula Atkinson , Dave A. Ritchie

In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…

介观与纳米尺度物理 · 物理学 2007-05-23 K. Lai , W. Pan , D. C. Tsui , S. Lyon , M. Muhlberger , F. Schaffler

We study the hopping conduction in a composite made of straight metallic nanowires randomly and isotropically suspended in an insulator. Uncontrolled donors and acceptors in the insulator lead to random charging of wires and hence finite…

无序系统与神经网络 · 物理学 2007-05-23 Tao Hu , B. I. Shklovskii

Based on renormalization group arguments we establish that for a superconductor in the presence of a weak external magnetic field, $B$, the dependence on $B$ and the deviation from the critical temperature, $\tau$, of a thermodynamic…

超导电性 · 物理学 2007-05-23 Denjoe O'Connor , C. R. Stephens

We study the hopping conductivity in a composite made of Gaussian coils of flexible metallic wires randomly and isotropically suspended in an insulator at such concentrations that the spheres containing each wire overlap. Uncontrolled…

无序系统与神经网络 · 物理学 2007-05-23 Tao Hu , B. I. Shklovskii

Using uniaxial stress to tune Si:B through the metal-insulator transition we find the conductivity at low temperatures shows an excellent fit to scaling with temperature and stress on both sides of the transition. The scaling functions…

强关联电子 · 物理学 2009-10-31 S. Bogdanovich , M. P. Sarachik , R. N. Bhatt

The scaling of the conductivity at the superfluid-insulator quantum phase transition in two dimensions is studied by numerical simulations of the Bose-Hubbard model. In contrast to previous studies, we focus on properties of this model in…

其他凝聚态物理 · 物理学 2009-11-11 Jurij Smakov , Erik Sorensen
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