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A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…

介观与纳米尺度物理 · 物理学 2009-10-31 E. Ribeiro , R. Jaeggi , T. Heinzel , K. Ensslin , G. Medeiros-Ribeiro , P. M. Petroff

We investigate half-metallicity in [001] stacked (CrAs)$_n$/(GaAs)$_n$ heterostructures with $n \leq 3$ by means of a combined many-body and electronic structure calculation. Interface states in the presence of strong electronic…

材料科学 · 物理学 2015-05-20 L. Chioncel , I. Leonov , H. Allmaier , F. Beiuseanu , E. Arrigoni , T. Jurcut , W. Pötz

We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…

介观与纳米尺度物理 · 物理学 2015-05-08 S. Das Sarma , E. H. Hwang , S. Kodiyalam , L. N. Pfeiffer , K. W. West

The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs…

We study energetic, magnetic, and electronic properties of diluted substitutional Mn-pairs on the reconstructed $(001)$ GaAs surfaces. The studies are based on first-principles calculations in the framework of the density functional theory.…

材料科学 · 物理学 2017-03-29 M. Birowska , C. Śliwa , J. A. Majewski

We investigate the electronic reconstruction at the interface between ferromagnetic metallic (FM) and antiferromagnetic insulating (AFI) manganites in superlattices using a two-orbital double-exchange model including superexchange…

强关联电子 · 物理学 2015-06-15 Kalpataru Pradhan , Arno P. Kampf

The carriers in InAs-GaSb double quantum wells are hybrid ``electron-holes''. We study the magnetotransport properties of such particles using a two-component Keldysh technique, which results in a semi-analytic expression for the…

介观与纳米尺度物理 · 物理学 2009-10-31 Y. Naveh , B. Laikhtman

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While…

Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric…

介观与纳米尺度物理 · 物理学 2015-06-19 Sumit Mondal , Geoffrey C. Gardner , John D. Watson , Saeed Fallahi , Amir Yacoby , Michael J. Manfra

We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmission probability…

介观与纳米尺度物理 · 物理学 2019-09-26 Tetsuro Habe

The electronic and magnetic properties of a new diluted magnetic semiconductor (DMS) Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, which is isostructural to so-called 122-type Fe-based superconductors, are investigated by x-ray…

The single electron magnetotransport in a vertical bi-layer semiconductor nanowire made of InAlAs/InGaAs and AlGaAs/GaAs heterostructure is theoretically studied. The magnetic field is directed perpendicularily to the main (transport) axis…

介观与纳米尺度物理 · 物理学 2016-08-24 T. Chwiej

Density functional theory is used to systematically study the electronic and magnetic properties of doped MoS$_2$ monolayers, where the dopants are incorporated both via S/Mo substitution or as adsorbates. Among the possible substitutional…

材料科学 · 物理学 2013-08-21 Kapildeb Dolui , Ivan Rungger , Chaitanya Das Pemmaraju , Stefano Sanvito

This paper reviews some selected approaches to the description of transport properties, mainly electroconductivity, in crystalline and disordered metallic systems. A detailed qualitative theoretical formulation of the electron transport…

统计力学 · 物理学 2011-09-27 A. L. Kuzemsky

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two-dimensionally in the first few molecular layers near the dielectric interface.…

We have studied the ferromagnetic Kondo lattice model (FKLM) with an Anderson impurity on finite chains with numerical techniques. We are particularly interested in the metallic ferromagnetic phase of the FKLM. This model could describe…

强关联电子 · 物理学 2009-11-13 S. Costamagna , J. A. Riera

Magnetoelectronics is mainly digital, i.e. governed by up and down magnetizations. In contrast, analogue magnetoelectronics makes use of phenomena occuring for non-collinear magnetization configurations. Here we review theories which have…

介观与纳米尺度物理 · 物理学 2015-06-24 Gerrit E. W. Bauer , Yaroslav Tserkovnyak , Daniel Huertas-Hernando , Arne Brataas

We report the observation of a dense triangular network of one-dimensional (1D) metallic modes in a continuous and uniform monolayer of MoSe2 grown by molecular-beam epitaxy. High-resolution transmission electron microscopy and scanning…

A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on…

材料科学 · 物理学 2007-05-23 W. Limmer , J. Daeubler , M. Glunk , T. Hummel , W. Schoch , R. Sauer

It is known that cuprate artificial high Tc superlattices (AHTS) with period d, composed of quantum wells confining interface space charge in stoichiometric Mott insulator layers (S), with thickness L, at the interface with overdoped normal…