相关论文: Hole concentration in a diluted ferromagnetic semi…

We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the…

In Fe pnictide (Pn) superconducting materials, neither Mn- nor Cr- doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are…

Guided by the internal-reference rule and the known band offsets in III-V and II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as…

We investigated the nature of the magnetic phase transition in the Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119. The DC magnetization measurements performed…

The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…

Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral…

We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using…

The rapidly developing field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga_{1-x}Mn_xAs with x ~ 1-10…

It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains…

We use supercell and frozen-magnon approaches to study the dependence of the magnetic interactions in (Ga,Mn)As on the Mn concentration. We report the parameters of the exchange interaction between Mn spins and the estimates of the Curie…

We use the local density approximation (LDA) and LDA+U schemes to study the magnetism of (GaMn)As and (GaMn)N for a number of Mn concentrations and varying number of holes. We show that for both systems and both calculational schemes the…

We theoretically investigate disorder effects on the ferromagnetic transition ('Curie') temperature $T_c$ in dilute III$_{1-x}$Mn$_x$V magnetic semiconductors (e.g. Ga$_{1-x}$Mn$_x$As) where a small fraction ($x \approx 0.01-0.1$) of the…

We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two…

We develop a quantitatively predictive theory for impurity-band ferromagnetism in the low-doping regime of GaMnAs and compare with experimental measurements of a series of samples whose compositions span the transition from paramagnetic…

We investigate the current debate on the Mn valence in Ga$_{1-x}$Mn$_x$N, a diluted magnetic semiconductor (DMSs) with a potentially high Curie temperature. From a first-principles Wannier-function analysis, we unambiguously find the Mn…

A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration…

The substitution of Mn in the III-V diluted magnetic semiconductors leads to a strong electron scattering on impurities. Besides the features induced in the valence band by the hybridization with the Mn d-states, also the conduction band is…

In order to single out dominant phenomena that account for carrier-controlled magnetism in p-(Cd,Mn)Te quantum wells we have carried out magneto-optical measurements and Monte Carlo simulations of time dependent magnetization. The…

The valence band states confined in infinitely deep quantum dots made of diluted magnetic semiconductors (DMS) are considered theoretically. A complex anisotropic structure of the valence bands in DMSs with cubic symmetry described by the…

We show that the critical temperature of a ferromagnetic phase transition in a quasi-two-dimensional hole gas confined in a diluted magnetic semiconductor quantum well strongly depends on the hole chemical potential and hole density. The…