中文
相关论文

相关论文: Filling-Control Metal-Insulator Transition in the …

200 篇论文

A new non-perturbative framework for many-body correlated systems is formulated by extending the operator projection method (OPM). This method offers a systematic expansion which enables us to project into the low-energy structure after…

强关联电子 · 物理学 2009-10-31 Shigeki Onoda , Masatoshi Imada

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

强关联电子 · 物理学 2007-05-23 Leonid Didukh , Vasyl Hankevych

Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field…

强关联电子 · 物理学 2007-05-23 Kota Hanasaki , Masatoshi Imada

The Hubbard model at temperatures above the N\'{e}el transition, despite being a paramagnet, can exhibit rich physics due to the interplay of Fermi surface, on-site interaction $U$ and thermal fluctuations. Nevertheless, the understanding…

强关联电子 · 物理学 2025-01-23 Yu-Feng Song , Youjin Deng , Yuan-Yao He

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-particle Green's functions within many-electron representation. A simple analytical generalization of the single-site Hubbard-III…

强关联电子 · 物理学 2009-11-07 V. Yu. Irkhin , A. V. Zarubin

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

We have investigated the half-filling two-orbital Hubbard model on a triangular lattice by means of the dynamical mean-field theory (DMFT). The densities of states and optical conductivity clearly show the occurence of metal-insulating…

强关联电子 · 物理学 2008-08-27 Feng Lu , Wei-Hua Wang , Liang-Jian Zou

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

凝聚态物理 · 物理学 2009-10-28 Stefan Blawid , Hoangh Anh Tuan , Takashi Yanagisawa , Peter Fulde

We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…

凝聚态物理 · 物理学 2007-05-23 Goetz Moeller , Qimiao Si , Gabriel Kotliar , Marcelo Rozenberg

The half-filled two-dimensional Hubbard model in presence of a uniform and static parallel magnetic field has been studied by means of the Composite Operator Method. A fully self-consistent solution, fulfilling all the constrains coming…

强关联电子 · 物理学 2007-05-23 A. Avella , F. Mancini

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

强关联电子 · 物理学 2026-02-27 Mingzhong Lu , Yu-Feng Song , Youjin Deng , Yuan-Yao He

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

The metal--insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the $t-t'$ Hubbard model at half-filling by using both the Hartree-Fock approximation (HFA) generalized for the case…

强关联电子 · 物理学 2016-11-03 M. A. Timirgazin , P. A. Igoshev , A. K. Arzhnikov , V. Yu. Irkhin

The Quantum Monte-Carlo simulations of the two-dimensional Hubbard model are presented for the half filling. The method based on the direct-space proposed by Suzuki and al., and Hirsch and al. was used. The states generated by this method…

强关联电子 · 物理学 2008-10-10 Bernard Martinie

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…

强关联电子 · 物理学 2023-11-21 Mathias Pelz , Severino Adler , Matthias Reitner , Alessandro Toschi
‹ 上一页 1 2 3 10 下一页 ›