相关论文: Theory of Angular Magnetoresistance in CPP spin va…

A spin-thermo-electronic valve with the free layer of exchange-spring type and inverse magnetoresistance is investigated. The structure has S-shaped current-voltage characteristics and can exhibit spontaneous oscillations when integrated…

Charge resistance and spin torque are generated by coherent carrier transport through ferromagnetic 360 degree domain walls, although they follow qualitatively different trends than for 180 degree domain walls. The charge resistance of 360…

A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…

We use a ferromagnetic voltage probe model to study the influence of inelastic scattering on giant magnetoresistance and current-induced torques in ferromagnetic and antiferromagnetic metal spin valves. The model is based on the Green's…

We study charge transport in a two dimensional hybrid systems consisting of nonmagnetic two dimensional electron gas with spin-orbit interaction sandwiched between a Ferromagnetic lead and a normal metallic lead (FM/2DEG/NM). An {\it…

We present a complete theory of the spin torque phenomena in a ultrasmall nanomagnet coupled to non-collinear ferromagnetic electrodes through tunnelling junctions. This model system can be described by a simple microscopic model which…

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…

The vortex dynamics of uniaxial anisotropic superconductors with arbitrary angles between the magnetic field, the applied current and the anisotropy axis is theoretically studied, by focusing on the models for electrical transport…

We report on our theoretical study of the magnetoresistance in spin polarized transport through a finite carbon nanotube (CNT). Varying the Fermi energy of a CNT and the relative strength of couplings to two ferromagnetic (FM) electrodes,…

We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its…

Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…

The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The…

The magnetoresistance in the variable-range hopping regime due to Zeeman spin-splitting and intra-impurity interactions is calculated analytically and shown to be a universal function of $\mu H / kT \log R$. Good agreement with numerical…

It has been shown experimentally a long time ago that the magnetic ordering causes an anomalous behavior of the electron resistivity in ferromagnetic crystals. Phenomenological explanations based on the interaction between itinerant…

Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…

The conductance of a ferromagnetic particle depends on the relative orientation of the magnetization with respect to the direction of current flow. This phenomenon is known as "anisotropic magnetoresistance". Quantum interference leads to…

The interplay between intrinsic and surface/interface-induced magnetic anisotropies strongly in- fluences magnetization processes in nanomagnetic systems. We develop a micromagnetic theory to describe the field-driven reorientation in…

We report on the possibility to detect hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multi-terminal device with…

Antiferromagnetic materials (AFMs) have been gaining lots of attentions due to its great potential in spintronics devices and the recently discovered novel spin structure in the momentum space, i.e., $C$-paired spin-valley or spin-momentum…