相关论文: Theory of Angular Magnetoresistance in CPP spin va…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
A correct general formula for the spin current through an interacting quantum dot coupled to ferromagnetic leads with magnetization at an arbitrary angle $\theta$ is derived within the framework of the Keldysh formalism. Under asymmetric…
The Hall and magnetoresistance of a two dimensional electron gas subjected to a magnetic field barrier parallel to the current direction is studied as function of the applied perpendicular magnetic field. The recent experimental results of…
The stability is analyzed of the magnetic junction collinear configurations against small fluctuations under amplitude-modulated current with CPP mode. High spin injection is assumed. Under parametric resonance conditions, with the…
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device…
The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the…
We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion…
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase…
The quasiclassical theory of a nanosize point contacts (PC) between two ferromagnets is developed. The maximum available magnetoresistance values in PC are calculated for ballistic versus diffusive transport through the area of a contact.…
We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the…
Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor. However, the equations of the diffusion theory are…
In the recent experiments the unusual oscillatory magnetoresistance in superconductors was discovered with a periodicity essentially independent on magnetic field direction and even material parameters. The nearly universal period points to…
Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…
We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behaviour of this model…
Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled…
The interface between a ferro-/ferrimagnetic insulator and a normal metal can support spin currents polarized collinear with and perpendicular to the magnetization direction. The flow of angular momentum perpendicular to the magnetization…
Angular momenta of electromagnetic waves are important both in concepts and applications. In this work, we systematically discuss two types of angular momenta, i.e., spin angular momentum and orbital angular momentum in various cases, e.g.,…
We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
We report the magnetoresistance of a charge-density wave (CDW) in $o$-TaS$_3$ whiskers at 4.2 K under a magnetic field up to 5.2 T. An anisotropic negative magnetoresistance is found in the nonlinear regime of current-voltage…