相关论文: Soliton Tunneling Transistor

Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…

We study a superconducting single-electron transistor (SSET) which is coupled to a LC-oscillator via the phase difference across one of the Josephson junctions. This leads to a strongly anharmonic coupling between the SSET and the…

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…

We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…

In this paper, the spin transfer torque (STT) and the exchange coupling of the Josephson junctions containing interesting cases of diffusive/ballistic-triplet/singlet ferromagnetic superconductor materials together with diffusive Josephson…

We investigate electron transport through a mono-atomic wire which is tunnel coupled to two electrodes and also to the underlying substrate. The setup is modeled by a tight-binding Hamiltonian and can be realized with a scanning tunnel…

The anomalous low-temperature properties of glasses arise from intrinsic excitable entities, so-called tunneling Two-Level-Systems (TLS), whose microscopic nature has been baffling solid-state physicists for decades. TLS have become…

We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of…

Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of…

The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of…

Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures.…

Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent tunneling of electrons through a single level in the dot has been studied. We have found that…

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…

In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…

The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor…

Recently observed Aharonov-Bohm quantum interference of period h/2e in charge density wave rings strongly suggest that correlated density wave electron transport is a cooperative quantum phenomenon. The picture discussed here posits that…

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…

We present an experimental realization of a Coulomb blockade refrigerator (CBR) based on a single - electron transistor (SET). In the present structure, the SET island is interrupted by a superconducting inclusion to permit charge transport…

Cotunneling is an important error process in the application of single electron tunneling devices for metrological and electronic applications. Here we present an experimental investigation of the theory for adiabatic enhancement of…