相关论文: Quantitative Comparison between AES and SIMS Depth…

New developments in quantitative sputter depth profiling during the past ten years are reviewed, with special emphasis on the experimental achievement of ultrahigh depth resolution (below 2 nm for sputtered depths larger than 10 nm). In…

Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2>0.9997) of…

In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an…

We report results of high-resolution TOF SIMS (time of flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic…

The physical principles of the MRI model (abbreviation for mixing-roughness- information depth) for the theoretical calculation of measured concentration- depth profiles obtained in sputter depth profiling with AES, XPS, SIMS, etc. are…

Co-sputtered Au-Ni thin films having thickness of 30 nm were deposited on Si(100) substrates and irradiated with 160 keV ^{40}Ar^{+} under ambient condition at a number of fluences and analyzed using Rutherford backscattering spectrometry…

The noise in the depth profiles of secondary ion mass spectrometry (SIMS) is studied using different samples under various experimental conditions. Despite the noise contributions from various parts of the dynamic SIMS process, its overall…

Factor Analysis has proved to be a powerful tool for the full exploitation of the chemical information included in the peak shapes and peak positions of spectra measured by AES depth profiling. Due to its ability to extract the number of…

The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on…

This study reports the development of a pattern recognition search engine for a World Wide Web-based database of gas chromatography-electron impact mass spectra (GC-EIMS) of partially methylated Alditol Acetates (PMAAs). Here, we also…

X-ray reflectometry (XRR) provides researchers and manufacturers with a non-destructive way to determine thickness, roughness, and density of thin films deposited on smooth substrates. Due to the nested nature of equations modeling this…

Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS) in a reflection mode are compared as the methods for phase composition investigation of thin film oxide systems by ion profiling. As an example, the Al/Al2O3/Si…

X-ray photoemission spectroscopy (XPS) depth profiling using monoatomic Ar+ ion etching sources is a common technique that allows for the probing of the vertical compositional profiles of a wide range of materials. In polymer-based organic…

Upcoming space-based gravitational wave detectors such as LISA, the Laser Interferometer Space Antenna, will be sensitive to extreme- and intermediate-mass-ratio inspirals (EMRIs and IMRIs). These binaries are comprised of a supermassive…

The General Spectral Modeling (GSM) code employs the quasi-static approximation, a standard, low-density methodology that assumes the ionization balance is separable from a determination of the excited-state populations that give rise to…

The Cluster mission, launched in 2000, has produced a large database of electron flux intensity measurements in the Earths magnetosphere by the Research with Adaptive Particle Imaging Detector (RAPID)/ Imaging Electron Spectrometer (IES)…

We present in this work energy levels, oscillator strengths, radiative decay rates and fine structure collision strengths for the Mg III and Al IV ions. The 11 configurations:(1s$^{2}$) 2s$^{2}$2p$^{6}$, 2s$^{2}$2p$^{5}3l$, 2s2p$^{6}3l$,…

In previous work a different and powerful, analytical, technique was used to get data, such as the absolute atom concentration (AAC), specimen thickness etc., from public domain boron nitride EELS spectrum collected under a collection…

Gildings, patinas and alteration crusts are common features of many heritage artefacts, especially for metals. Their size depends on many factors, like the manufacturing method for gildings or the conservation state for alteration crusts:…

We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar$^+$-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs…