相关论文: A single-electron inverter

We report on the injection of quantized pure spin current into quantum conductors. In particular, we propose an on demand single spin source generated by periodically varying the gate voltages of two quantum dots that are connected to a two…

The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…

In this Letter, we present a theoretical analysis to single-electron pumping operation in a large range of driving frequencies through the time-dependent tunneling barriers controlled by external gate voltages. We show that the…

We Have developed the concept of a new kind of single-electron transistor in which the transport of the electron through a quantum wire is controlled by charged quantum rings. Using a 2D harmonic potential as the transverse constraint, we…

Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…

We present experiments on a superconductor-normal metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor, i.e., the heat flux out from the normal metal…

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…

A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top…

Multilevel converters have found many applications within renewable energy systems thanks to their unique capability of generating multiple voltage levels. However, these converters need multiple DC sources and the voltage balancing over…

We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable…

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes…

We propose a remarkably simple electronic refrigerator based on the Coulomb barrier for single-electron tunneling. A fully normal single-electron transistor is voltage $V$ biased at a gate position such that tunneling through one of the…

A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically…

It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a…

Transistors are the cornerstone of modern electronics. Yet, their relatively complex characteristics, allied with often observed great parameter variation, remain a challenge for discrete and integrated electronics. Much of transistor…

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…

Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of…