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We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the…

介观与纳米尺度物理 · 物理学 2007-05-23 S. De Franceschi , J. A. van Dam , E. P. A. M. Bakkers , L. F. Feiner , L. Gurevich , L. P. Kouwenhoven

The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…

We study the model of a molecular switch comprised of a molecule with a soft vibrational degree of freedom coupled to metallic leads. In the presence of strong electron-ion interaction, different charge states of the molecule correspond to…

介观与纳米尺度物理 · 物理学 2008-12-18 Fabio Pistolesi , Yaroslav M. Blanter , Ivar Martin

Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation…

介观与纳米尺度物理 · 物理学 2016-07-21 L. Lin , X. Wu , W. Low , D. Zhang , Zhenhua Wu

This paper describes a novel integrated circuit technology to manufacture high-density thermoelectric devices on a semiconductor wafer. With no moving parts, a thermoelectric cooler operates quietly, allows cooling below ambient…

综合物理 · 物理学 2008-01-08 H. Chen , L. Hsu , X. Wei

Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection. However, its experimental verification has been challenging…

A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias…

介观与纳米尺度物理 · 物理学 2009-10-31 Torsten Henning , B. Starmark , T. Claeson , P. Delsing

The qualities of electron refrigeration by means of tunnel junctions between superconducting and normal--metal electrodes are studied theoretically. A suitable approximation of the basic expression for the heat current across those tunnel…

介观与纳米尺度物理 · 物理学 2009-10-28 Heinz-Olaf Muller , K. A. Chao

The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…

介观与纳米尺度物理 · 物理学 2014-09-04 F. Giazotto , J. W. A. Robinson , J. S. Moodera , F. S. Bergeret

Design and implementation of an optimal and robust single-loop voltage controller is proposed for single-phase grid forming voltage source inverter (VSI). The objective of the proposed controller is to have good reference tracking and…

系统与控制 · 电气工程与系统科学 2020-03-16 Soham Chakraborty , Sourav Patel , Murti V. Salapaka

A single-photon switch is an important element for the building of scalable quantum networks. In this paper, we propose a feasible scheme for efficient single-photon switching. The proposed switch is controlled by a state of a qubit formed…

量子物理 · 物理学 2020-12-14 Eugene Stolyarov

We discuss inherent thermometry in a Superconductor - Normal metal - Superconductor tunnel junction. In this configuration, the energy selectivity of single-particle tunneling can provide a significant electron cooling, depending on the…

超导电性 · 物理学 2009-11-13 Hervé Courtois , Sukumar Rajauria , Philippe Gandit , Frank Hekking , Bernard Pannetier

Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…

凝聚态物理 · 物理学 2009-10-28 Jens Siewert , Gerd Schön

Biaxial strain effects on electronic structures and thermoelectric properties of monolayer $\mathrm{PtTe_2}$ are investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for the electron part and GGA for…

材料科学 · 物理学 2017-04-26 San-Dong Guo

Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear…

介观与纳米尺度物理 · 物理学 2008-01-28 H. Agarwal , S. Pramanik , S. Bandyopadhyay

On-silicon inductors using a bulk 0.18 {\mu}m CMOS process have been designed. By shunting different metal layers in parallel, inductor values and quality factors were simulated. Selected inductors were then employed in two open-loop buck…

应用物理 · 物理学 2019-10-01 Nan Xu , Wing-Hung Ki

A photonic transistor that can switch or amplify an optical signal with a single gate photon requires strong non-linear interaction at the single-photon level. Circuit quantum electrodynamics provides great flexibility to generate such an…

We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , Z. K. Keane , J. W. Ciszek , L. Cheng , J. M. Tour , T. Baruah , M. R. Pederson , D. Natelson

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron…

介观与纳米尺度物理 · 物理学 2007-05-23 L. H. Yu , Z. K. Keane , J. W. Ciszek , L. Cheng , M. P. Stewart , J. M. Tour , D. Natelson
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