相关论文: Deviations from Matthiessen's Rule for ${\rm SrRuO…

The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to…

In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence…

Low temperature ($\sim$ 20~K) electron irradiation with 2.5 MeV relativistic electrons was used to study the effect of controlled non-magnetic disorder on the normal and superconducting properties of the type-II Dirac semimetal PdTe$_2$. We…

While stoichiometric SrRuO$_3$ (SRO) is a metallic itinerant ferromagnet with relatively homogeneous magnetization, Ru deficiency provides a powerful route to alter its electronic transport and depth-dependent magnetic properties.…

The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt…

Perovskite oxides display correlated electrical, magnetic, and thermal properties that can be further tuned in the thin-film limit, making them contenders for next-generation electronics. Measuring thermal transport in thin films is…

Inspired by nature, we investigate the short-range order effect on the physical properties of amorphous materials. Amorphous Al2O3 thin films exhibit a higher proportion of their 4-coordinated Al sites close to the surface, causing…

We reanalyze the seminal work by Dolan and Osheroff [Phys. Rev. Lett. $\textbf{43}$, 721 (1979)] which reported anomalous low-temperature conduction of high-resistivity thin-film metal strips. We argue that the observed logarithmic increase…

The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown by rf sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an AC electric…

The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the…

The ab-plane reflectivity of (Y{1-x}Prx)Ba2Cu3O7 thin films was measured in the 30-30000 cm-1 range for samples with x = 0 (Tc = 90 K), x = 0.4 (Tc = 35 K) and x = 0.5 (Tc = 19 K) as a function of temperature in the normal state. The…

Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the…

The optical conductivities of films of (La$_{0.5}$Pr$_{0.5}$)$_{0.7}$Ca$_{0.3}$MnO$_3$ with different oxygen isotopes ($^{16}$O and $^{18}$O) have been determined in the spectral range from 0.3 to 4.3 eV using a combination of transmission…

Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing…

The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. We irradiated the…

The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a free-electron model calculation and confirmed by an ab initio relativistic…

In this paper we present normal state magnetoresistivity data of magnesium diboride epitaxial thin films with different levels of disorder, measured at 42K in magnetic fields up to 45 Tesla. Disorder was introduced in a controlled way…

NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) from 30 to 1100 C, we track the structural evolution of NiO…

Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells…

We compare the behavior of the magnetothermoelectric power (MTEP)in metallic ferromagnetic thin films of Ni80Fe20 (Permalloy; Py), Co and CrO2 at temperatures in the range of 100 K to 400 K. In 25 nm thick Py films and 50 nm thick Co films…