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相关论文: Absence of a Slater Transition in The Two-Dimensio…

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In a recent paper, Phys. Rev. Lett. 87, 167010/1-4 (2001), Moukouri and Jarrell presented evidence that in the two-dimensional (d=2) Hubbard model at half-filling there is a metal-insulator transition (MIT) at finite temperature even in…

强关联电子 · 物理学 2009-11-07 B. Kyung , J. S. Landry , D. Poulin , A. -M. S. Tremblay

We have studied the impact of non-local electronic correlations at all length scales on the Mott-Hubbard metal-insulator transition in the unfrustrated two-dimensional Hubbard model. Combining dynamical vertex approximation, lattice quantum…

强关联电子 · 物理学 2015-03-05 T. Schäfer , F. Geles , D. Rost , G. Rohringer , E. Arrigoni , K. Held , N. Blümer , M. Aichhorn , A. Toschi

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

We address the nature of the Mott transition in the Hubbard model at half-filling using cluster Dynamical Mean Field Theory (DMFT). We compare cluster DMFT results with those of single site DMFT. We show that inclusion of the short range…

强关联电子 · 物理学 2009-11-13 H. Park , K. Haule , G. Kotliar

We use the Kotliar-Ruckenstein slave boson technique to treat the strong correlation of the Hubbard model. In a first part we discuss the metal to insulator transition that is occurring on the honeycomb lattice at half filling. We find the…

凝聚态物理 · 物理学 2007-05-23 Raymond Fresard , Klaus Doll

We introduce a Cellular Dynamical Cluster Approximation (CDCA) to study the nature of the Mott insulator-metal transition in the extended Hubbard model on a square lattice. At strong coupling, a d-wave Mott insulator is obtained. Hole…

强关联电子 · 物理学 2007-05-23 Mukul S. Laad , Luis Craco

The metal--insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the $t-t'$ Hubbard model at half-filling by using both the Hartree-Fock approximation (HFA) generalized for the case…

强关联电子 · 物理学 2016-11-03 M. A. Timirgazin , P. A. Igoshev , A. K. Arzhnikov , V. Yu. Irkhin

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

We explore the effect of the imaginary part of the self-energy, $Im\Sigma(\vec{k},\omega)$, having a single pole, $\Omega(\vec{k},\omega)$, with spectral weight, $\alpha(\vec{k})$, and quasi-particle lifetime, $\Gamma(\vec{k})$, on the…

凝聚态物理 · 物理学 2016-08-15 J. J. Rodríguez-Núñez , S. Schafroth

We study the two-dimensional square lattice Hubbard model for small to moderate interaction strengths $1\leq U/t\leq 4$ by means of the ladder dual fermion approach. The non-local correlations beyond dynamical mean-field theory lower the…

强关联电子 · 物理学 2018-02-14 Erik G. C. P. van Loon , Hartmut Hafermann , Mikhail Katsnelson

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We have investigated the half-filling two-orbital Hubbard model on a triangular lattice by means of the dynamical mean-field theory (DMFT). The densities of states and optical conductivity clearly show the occurence of metal-insulating…

强关联电子 · 物理学 2008-08-27 Feng Lu , Wei-Hua Wang , Liang-Jian Zou

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…

凝聚态物理 · 物理学 2015-06-25 Marcelo J. Rozenberg , Goetz Moeller , Gabriel Kotliar

By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…

强关联电子 · 物理学 2007-05-23 Ping Sun

Thermodynamic and dynamical properties of filling-control metal-insulator transition (MIT) in the Hubbard model are studied by the operator projection method, especially in two dimensions. This is a non-perturbative analytic approach to…

强关联电子 · 物理学 2009-11-07 Shigeki Onoda , Masatoshi Imada

Based on dynamical cluster approximation (DCA) quantum Monte Carlo simulations, we study the interaction-driven Mott metal-insulator transition (MIT) in the half-filled Hubbard model on the anisotropic two-dimensional triangular lattice,…

强关联电子 · 物理学 2015-04-06 Hung T. Dang , Xiao Yan Xu , Kuang-Shing Chen , Zi Yang Meng , Stefan Wessel

A systematic study has been made on the metal-insulator (MI) transition of the doubly degenerate Hubbard model (DHM) in the paramagnetic ground state, by using the slave-boson mean-field theory which is equivalent to the Gutzwiller…

强关联电子 · 物理学 2009-10-30 Hideo Hasegawa

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

Using finite-temperature determinantal quantum Monte Carlo simulations, we examine the thermodynamic properties of the extended Hubbard model on the half-filled square lattice in the Slater regime at intermediate coupling. We consider both…

强关联电子 · 物理学 2022-10-19 Alexander Sushchyev , Stefan Wessel

We study the low-energy properties of the geometrically frustrated Hubbard model on a three-dimensional pyrochlore lattice and a two-dimensional checkerboard lattice on the basis of the renormalization group method and mean field analysis.…

强关联电子 · 物理学 2009-11-07 Satoshi Fujimoto
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