相关论文: Spin diffusion in doped semiconductors: the role o…

We study the effect of the electron-electron interaction on the transport of spin polarized currents in metals and doped semiconductors in the diffusive regime. In addition to well-known screening effects, we identify two additional…

The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…

We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and…

We study the effect of contact hyperfine interaction on the nuclear spin diffusion coefficients in semiconductor quantum dots. The diffusion coefficients are calculated with both the method of moment and density matrix. We show that nuclear…

The spin diffusion and damped oscillations are studied in the collision of two spin polarized clouds of cold atoms with resonant interactions. The strong density dependence of the diffusion coefficient leads to inhomogeneous spin diffusion…

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…

Microscopic properties of low-energy spin dynamics in diluted magnetic semiconductor are addressed in a framework of the Kondo lattice model including random distribution of magnetic dopants. Based on the fluctuation-dissipation theorem, we…

The phenomenon of low-temperature spin Coulomb drag in a two-dimensional electron gas is investigated. The spin transresistivity coefficient is essentially enhanced in the diffusive regime, as compared to conventional predictions. The…

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…

The spin and charge transport in materials with spin-dependent conductivity has been studied. It was shown that there is a charge accumulation along spin diffusion in a ferromagnetic metal, which causes a shortening of the spin diffusion…

We present results of a numerical mean field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Disorder is found to enhance…

Spintronics devices rely on spin-dependent transport behavior evoked by the presence of spin-polarized electrons. Transport through nanostructures, on the other hand, is dominated by strong Coulomb interaction. We study a model system in…

We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of…

We introduce a distinctive feature of spin-polarized transport, the Spin Coulomb Drag: there is an intrinsic source of friction for spin currents due to the Coulomb interaction between spin ``up'' and spin ``down'' electrons. We calculate…

This article reviews spin-dependent transport of carriers in homogenous three-dimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection…

We consider the problem of the superconductor-insulator transition in the presence of disorder, assuming that the fermionic degrees of freedom can be ignored so that the problem reduces to one of Cooper pair localization. Weak disorder…

We present a microscopic calculation of the Gilbert damping constant for the magnetization of a two-dimensional spin-polarized electron liquid in the presence of intrinsic spin-orbit interaction. First we show that the Gilbert constant can…

We derive a closed expression for the linear conductance through a quantum dot in the Coulomb-blockade regime in the presence of a constant exchange interaction. With this expression we calculate the temperature dependence of the…

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two…

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped…