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A general expression is given for the change in free energy when a charge tunnels through a junction in a one-dimensional array of N metallic islands with arbitrary capacitances and arbitrary background charges. This is used to obtain…

介观与纳米尺度物理 · 物理学 2009-10-28 J. A. Melsen , Ulrik Hanke , H. -O. Müller , K. -A. Chao

Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric…

介观与纳米尺度物理 · 物理学 2016-08-15 Heinz-Olaf Müller , Miha Furlan , Thomas Heinzel , Klaus Ensslin

We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in many experimental systems. We show that a single background…

介观与纳米尺度物理 · 物理学 2009-08-25 M. Pierre , M. Hofheinz , X. Jehl , M. Sanquer , G. Molas , M. Vinet , S. Deleonibus

We determine the zero-bias anomaly of the conductance of tunnel junctions by an approach unifying the conventional Coulomb blockade theory for ultrasmall junctions with the diffusive anomalies in disordered conductors. Both,…

介观与纳米尺度物理 · 物理学 2009-11-07 Joerg Rollbuehler , Hermann Grabert

We have investigated asymptotic behavior of normal tunnel junctions at voltages where even the best ohmic environments start to look like RC transmission lines. In the experiments, this is manifested by an exceedingly slow approach to the…

介观与纳米尺度物理 · 物理学 2019-10-01 J. S. Penttila , U. Parts , P. J. Hakonen , M. A. Paalanen , E. B. Sonin

We investigate the transport properties of a new class of ratchets. The device is constructed by applying an ac voltage to the metallic single electron tunneling transistor, and a net transport current is induced by the time-dependent…

介观与纳米尺度物理 · 物理学 2007-05-23 Xiao-hui Wang , Tobias Junno , Sven-Bertil Carlsson , Claes Thelander , Lars Samuelson

We study theoretically the nature of correlations in space and time of the current in a one-dimensional bilinear array of tunnel junctions in the normal conduction limit, using the kinetic Monte Carlo (KMC) method. The bilinear array…

介观与纳米尺度物理 · 物理学 2015-06-17 Kelly A. Walker , Jared H. Cole

The charge transfer statistics of a tunnel junction coupled to a quantum object is studied using the charge projection technique. The joint dynamics of the quantum object and the number of charges transferred through the junction is…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Wabnig , D. V. Khomitsky , J. Rammer , A. L. Shelankov

Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and…

介观与纳米尺度物理 · 物理学 2016-08-31 Sh. Farhangfar , R. S. Poikolainen , J. P. Pekola , D. S. Golubev , A. D. Zaikin

The non linear charge transfer through a tunnel junction between two Luttinger systems is studied for repulsive, finite range interaction between electrons on the same, V_{11}, and on different,V_{12}, sides of the junction. Features of the…

介观与纳米尺度物理 · 物理学 2009-10-30 Maura Sassetti , Bernhard Kramer

We study strong tunneling (i.e. transmission $h/e^2R_T \gg 1$) in the single-electron box with many transverse modes at zero temperature. We develop a new renormalization group method which includes all charge states and requires no initial…

介观与纳米尺度物理 · 物理学 2009-10-31 Jürgen König , Herbert Schoeller

We have investigated one and two dimensional (1D and 2D) arrays of tunnel junctions in partial Coulomb blockade regime. The absolute accuracy of the Coulomb blockade thermometer is influenced by the external impedance of the array, which is…

介观与纳米尺度物理 · 物理学 2009-10-31 J. P. Pekola , L. J. Taskinen , Sh. Farhangfar

We have used numerical modeling and a semi-analytical calculation method to find the low frequency value S_{I}(0) of the spectral density of fluctuations of current through 1D arrays of small tunnel junctions, using the ``orthodox theory''…

强关联电子 · 物理学 2009-10-31 K. A. Matsuoka , K. K. Likharev

We theoretically investigate resonant tunneling through a linear array of quantum dots with subsequent tunnel coupling. We consider two limiting cases: (i) strong Coulomb blockade, where only one extra electron can be present in the array…

介观与纳米尺度物理 · 物理学 2009-10-31 M. R. Wegewijs , Yu. V. Nazarov

We analyze and clarify the transport properties of a one-dimensional metallic nanoparticle array with interaction between charges restricted to charges placed in the same conductor. We study the threshold voltage, the I-V curves and the…

介观与纳米尺度物理 · 物理学 2009-11-13 E. Bascones , V. Estevez , J. A. Trinidad , A. H. MacDonald

Monte Carlo simulations and an analytical approach within the framework of a semiclassical model are presented which permit the determination of Coulomb blockade and single electron charging effects for multiple tunnel junctions coupled in…

介观与纳米尺度物理 · 物理学 2009-10-30 U. E. Volmar , U. Weber , R. Houbertz , U. Hartmann

The transmission of charge through an ultrasmall double junction is considered with Coulomb effects but at zero temperature. We construct an equation which describes the time development of the transmission probability of charges and solve…

介观与纳米尺度物理 · 物理学 2016-08-15 Heinz-Olaf Müller

We simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour in the large charging energy limit. By applying a small fixed voltage bias and varying the offset voltage, we…

介观与纳米尺度物理 · 物理学 2016-01-15 Kelly A. Walker , Nicolas Vogt , Jared H. Cole

We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages,…

凝聚态物理 · 物理学 2009-10-22 Selman Hershfield , John H. Davies , Per Hyldgaard , Christopher J. Stanton , John W. Wilkins

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open…

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