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相关论文: An anomalous alloy: Y_x Si_{1-x}

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We study the structural, dynamical and electronic properties of amorphous Si\sub{1-x}Ge\sub{x}:H alloys using first principles local basis molecular dynamics simulation. The network topology and defects in the amorphous network have been…

材料科学 · 物理学 2007-05-23 T. A. Abtew , D. A. Drabold

We report a new approach to simulate amorphous networks of covalently bonded materials that leads to excellent radial distribution functions and realistic atomic arrangements. We apply it to generate the first ab initio structures of…

材料科学 · 物理学 2007-05-23 Fernando Alvarez , Ariel A. Valladares

We have performed an approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon (a-Si:H) using a molecular dynamics method. A 216 atom model for pure amorphous silicon (a-Si) has been employed as a…

无序系统与神经网络 · 物理学 2009-10-31 Serge M. Nakhmanson , D. A. Drabold

Alkaline earth mono-silicides ({\AE}Si, {\AE} $=$ Ca, Sr, Ba) are poor metals and their transport properties are not solely determined by the Zintl anion, in contrast to their Zintl-type composition. Their conducting network is formed by…

其他凝聚态物理 · 物理学 2012-09-18 Eduardo Cuervo-Reyes , Elizabeth Diane Stalder , Christian Mensing , Serhiy Budnyk , Reinhard Nesper

We present linear ensembles of dangling bond chains on a hydrogen terminated Si(100) surface, patterned in the closest spaced arrangement allowed by the surface lattice. Local density of states maps over a range of voltages extending…

介观与纳米尺度物理 · 物理学 2016-07-21 John A. Wood , Mohammad Rashidi , Mohammad Koleini , Jason L. Pitters , Robert A. Wolkow

We present a computational study of small-angle X-ray scattering (SAXS) in amorphous silicon ($a$-Si) with particular emphasis on the morphology and microstructure of voids. The relationship between the scattering intensity in SAXS and the…

无序系统与神经网络 · 物理学 2018-05-23 Durga Paudel , Raymond Atta-Fynn , David A. Drabold , Stephen R. Elliott , Parthapratim Biswas

The structural and electronic properties of amorphous silicon ($a$-Si) are investigated by first-principles calculations based on the density-functional theory (DFT), focusing on the intrinsic structural defects. By simulated melting and…

材料科学 · 物理学 2017-10-11 Yoritaka Furukawa , Yu-ichiro Matsushita

The layered ternary sp conductor NaAlSi, possessing the iron-pnictide "111" crystal structure, superconducts at 7 K. Using density functional methods, we show that this compound is an intrinsic (self-doped) low-carrier-density semimetal…

超导电性 · 物理学 2012-08-21 H. B. Rhee , S. Banerjee , E. R. Ylvisaker , W. E. Pickett

At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a data base containing over 8000 such…

无序系统与神经网络 · 物理学 2009-10-31 Normand Mousseau , G. T. Barkema

Recent theoretical studies of amorphous silicon [Y. Pan et al. Phys. Rev. Lett. 100 206403 (2008)] have revealed subtle but significant structural correlations in network topology: the tendency for short (long) bonds to be spatially…

无序系统与神经网络 · 物理学 2015-05-13 F. Inam , James P. Lewis , D. A. Drabold

Bismuth has been shown to be topological in its different allotropes and compounds, with one of the most notable examples being the Bi-Sb alloy, the first 3D topological insulator ever discovered. In this paper we explore two-dimensional…

无序系统与神经网络 · 物理学 2024-10-22 A. J. Uría-Álvarez , J. J. Palacios

We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our calculations give unambiguous evidence that point defects…

材料科学 · 物理学 2007-05-23 Cristiano L. Dias , Laurent J. Lewis , S. Roorda

On the basis of density functional calculations and using Bader's atom in molecule theory, this article presents quantitative microscopic analyses on the bonding properties of amorphous silicon (a-Si) which could reflect in the observable…

材料科学 · 物理学 2019-04-11 Zahra Nourbakhsh , Hadi Akbarzadeh

Since the pioneering efforts of Duwez and coworkers in 1965, when a solid amorphous phase of Pd-Si ($a$-PdSi) was obtained in the vicinity of the eutectic concentration, much work has been done. However, some points related to the atomic…

Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550…

光学 · 物理学 2007-11-13 D. S. L. Figueira , N. C. Frateschi

The structural and magnetic properties of the as-cast and annealed V$_{0.6-x}$Si$_x$Ti$_{0.4}$ ($x$ = 0, 0.05, 0.10, 0.15) alloy superconductors are reported here. It is found that addition of silicon to the V-Ti alloys results in eutectic…

We use first principles calculations to study the electronic properties of rock salt rare earth monopnictides La$X$ ($X=$N, P, As, Sb, Bi). A new type of topological band crossing termed `linked nodal rings' is found in LaN when the small…

介观与纳米尺度物理 · 物理学 2015-04-15 Minggang Zeng , Chen Fang , Guoqing Chang , Yu-An Chen , Timothy Hsieh , Arun Bansil , Hsin Lin , Liang Fu

We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…

无序系统与神经网络 · 物理学 2009-10-30 Thorsten Koslowski , Walter Kob , Katharina Vollmayr

Three orders of magnitude cavity-linewidth narrowing in a rare-earth-ion-doped crystal cavity, induced by strong intra-cavity dispersion caused by off-resonant interaction with dopant ions is demonstrated. The strong dispersion is created…

量子物理 · 物理学 2014-01-09 Mahmood Sabooni , Qian Li , Lars Rippe , Stefan Kröll

A strong anisotropic distribution of the holes in Ni 3d and O 2p orbitals is observed in the polarization dependent O1s and Ni2p3/2 x-ray absorption spectroscopy of the linear-chain nickelate Y1-xCaxBaNiO5 (x = 0, 0.05, 0.1, 0.2), which…

强关联电子 · 物理学 2009-11-07 Z. Hu , M. Knupfer , M. Kielwein , U. K. Roessler , M. S. Golden , J. Fink , F. M. F. de Groot , T. Ito , G. Kaindl
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